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MC14504BDR2

Onsemi

MC14504BDR2 by Onsemi

MC14504BDR2 by Onsemi is a voltage level translator with 6 functions, operating b/w -55 to 125 °C. It has a supply voltage range of 3-18 V and max delay of 550 ns. Ideal for TTL/CMOS to CMOS translation in military-grade applications.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 64 parts In-Stock

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$1.150

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$0.870

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$0.750

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64

$1.150

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Chip Stock

USA . 38,161 parts In-Stock

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Martec Srl

Italy . 2,277 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 1,085 parts In-Stock

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ComSIT USA

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Digiode

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Bristol Electronics

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Sea View Technologies

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J & M Industries LLC

USA . 40 parts In-Stock

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Velocity Electronics

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Atlantic Semiconductor

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Corohmni

South Africa . 57 parts In-Stock

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SupplyDigital Components

Austria . 4,681 parts In-Stock

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Problanco Electronics

Mexico . 3,987 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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TANS Electronics

Latvia . 1,262 parts In-Stock

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Kepictronics

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UHIMA Technologies

Türkiye . 906 parts In-Stock

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Corphita

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Overview

Unlock the potential of your electronic designs with the MC14504BDR2 by Onsemi, a top-tier manufacturer known for quality and reliability. As a voltage level translator, this innovative product offers seamless integration and smooth signal transitions, making it ideal for a wide range of applications. From consumer electronics to industrial automation, the MC14504BDR2 delivers unmatched performance, efficiency, and precision. Experience the value and benefits of cutting-edge technology with this versatile component, designed to exceed your expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term usage.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Supply Voltage: 18 V

Can handle higher voltage levels, making it versatile for various applications.

No. of Functions: 6

Provides multiple functions in a single component, reducing the need for additional components.

Package Shape: RECTANGULAR

Rectangular shape fits well within circuit layouts, optimizing space on the board.

Power Supplies (V): 5/15

Supports multiple power supply voltages, allowing for compatibility with different systems.

No. of Terminals: 16

Offers a sufficient number of terminals for connecting to other components and devices.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and can fit in compact electronic devices.

Minimum Supply Voltage: 3 V

Works efficiently at low voltage levels, conserving power and reducing energy consumption.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without risk of damage, ensuring reliable performance in demanding environments.

Minimum Operating Temperature: -55 °C

Operates under extreme low temperatures, suitable for applications that require cold temperature resilience.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for secure connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting orientations and connection options.

Maximum Seated Height: 1.75 mm

Low profile design minimizes the overall size of the component in the circuit.

Width: 3.9 mm

Narrow width saves space on the circuit board, allows for compact designs.

Output Polarity: TRUE

True output polarity ensures accurate signal translation and compatibility with other components.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during manufacturing processes, ensuring component integrity.

Length: 9.9 mm

Compact length allows for versatile placement and integration within electronic systems.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures reliability in harsh operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for efficient signal translation.

Terminal Form: GULL WING

Gull wing terminal form makes soldering easy and reliable for secure connections.

Nominal Supply Voltage: 5 V

Nominal supply voltage of 5V ensures compatibility with standard electronic systems.

Maximum Delay: 550 ns

Low maximum delay time ensures fast signal translation, minimizing latency in the system.

Terminal Pitch: 1.27 mm

Standard terminal pitch allows for easy integration and compatibility with standard PCB layouts.

Interface IC Type: TTL/CMOS TO CMOS TRANSLATOR

Supports interface translation from TTL/CMOS to CMOS, enabling compatibility between different logic levels in electronic systems.

Technical Specifications

Voltage Level Translators MC14504BDR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

550 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

6

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MC14504BDR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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