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M1MA151AT1G

Onsemi

M1MA151AT1G by Onsemi

M1MA151AT1G by Onsemi is a single rectifier diode with a max forward voltage of 1.2V and output current of 0.1A. It has a small outline package style, operates at up to 150 °C, and features a peak reflow temperature of 260°C. Ideal for applications requiring fast reverse recovery time in electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 713,752 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

713,752

-

$0.030

$0.025

$0.023

Verical

USA . 453,000 parts In-Stock

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-

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453,000

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-

Distributors (In-Stock)

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Digiode

USA . 2,419 parts In-Stock

1+ parts

$0.024

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2,419

$0.024

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Vyrian

USA . 7,198 parts In-Stock

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7,198

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,474 parts In-Stock

1+ parts

$0.022

100+ parts

-

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2,474

$0.022

-

-

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Corohmni

South Africa . 431 parts In-Stock

1+ parts

$0.025

100+ parts

-

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431

$0.025

-

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-

Component Stockers USA

USA . 991,307 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

991,307

$0.030

$0.020

$0.020

$0.020

AZTECH Wire

Italy . 566 parts In-Stock

1+ parts

$14.610

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-

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566

$14.610

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Continental Prestige Electronics

USA . 713,752 parts In-Stock

1+ parts

-

100+ parts

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$0.024

713,752

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$0.024

QUARKTWIN TECHNOLOGY LTD

USA . 17,890 parts In-Stock

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17,890

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Problanco Electronics

Mexico . 7,833 parts In-Stock

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7,833

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Kulean Microsystems

USA . 7,598 parts In-Stock

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7,598

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TANS Electronics

Latvia . 4,632 parts In-Stock

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4,632

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SupplyDigital Components

Austria . 3,760 parts In-Stock

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3,760

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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154

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Overview

Discover the M1MA151AT1G by Onsemi, a high-quality rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for a wide range of applications. Its small outline package makes it ideal for space-constrained designs, while its fast reverse recovery time ensures efficient operation. With a maximum forward voltage of 1.2V and output current of 0.1A, this diode provides excellent value and benefits to customers looking for a reliable solution for their electronic needs. Experience the advantages of the M1MA151AT1G and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the diode, ensuring reliable performance.

Surface Mount: YES

Surface mount capability allows for easy installation and saves space on PCBs, making it ideal for compact electronic devices.

Maximum Reverse Recovery Time: 0.003 us

Low reverse recovery time ensures fast switching and efficient performance of the rectifier diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature provides good thermal stability, allowing the diode to function well in various environments.

Maximum Power Dissipation: 0.2 W

Low power dissipation helps in reducing heat generation and energy loss, making the diode energy-efficient.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC, making it a versatile choice for power supply applications.

Technical Specifications

Diodes & Rectifiers M1MA151AT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.003 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA151AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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