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M1MA141WKT1G

Onsemi

M1MA141WKT1G by Onsemi

M1MA141WKT1G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.003 us. With a max operating temperature of 150 °C, it is suitable for rectifier applications. This small outline package diode has a max forward voltage of 1.2V and can handle a max output current of 0.1A.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 199,300 parts In-Stock

1+ parts

-

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$0.030

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$0.025

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$0.023

199,300

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$0.030

$0.025

$0.023

DigiKey

USA . 199,300 parts In-Stock

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199,300

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Verical

USA . 199,300 parts In-Stock

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199,300

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Digiode

USA . 1,958 parts In-Stock

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$0.024

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$0.024

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Vyrian

USA . 2,121 parts In-Stock

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$0.025

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DigiKey Marketplace

USA . 199,300 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,317 parts In-Stock

1+ parts

$0.022

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2,317

$0.022

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Corohmni

South Africa . 164 parts In-Stock

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$0.025

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164

$0.025

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.053

100+ parts

$0.048

1k+ parts

$0.043

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-

50

$0.053

$0.048

$0.043

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Continental Prestige Electronics

USA . 199,300 parts In-Stock

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$0.012

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$0.012

Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,025 parts In-Stock

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Problanco Electronics

Mexico . 6,418 parts In-Stock

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Kulean Microsystems

USA . 4,330 parts In-Stock

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SupplyDigital Components

Austria . 1,144 parts In-Stock

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TANS Electronics

Latvia . 242 parts In-Stock

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UHIMA Technologies

Türkiye . 176 parts In-Stock

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Overview

Unlock the power of precision with the M1MA141WKT1G by Onsemi. Crafted with premium quality materials and advanced technology, this diode offers unparalleled performance and reliability for a wide range of applications. Whether you're looking to enhance your electronic devices or optimize your industrial processes, this product is designed to exceed your expectations. Say goodbye to downtime and hello to seamless operation with the M1MA141WKT1G - your key to maximizing efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical protection and insulation for the diodes, ensuring durability and safety.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy circuit design and connection, simplifying the overall system setup.

Maximum Reverse Recovery Time: 0.003 us

Ensures fast switching speeds, making the diode efficient for high-frequency applications.

Package Shape: RECTANGULAR

Facilitates compact and space-saving circuit layout, especially when multiple diodes are used.

No. of Terminals: 3

Offers flexibility in connection options, allowing for versatile usage in different circuit configurations.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making the diode suitable for demanding industrial environments.

Terminal Finish: TIN

Provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Power Dissipation: 0.15 W

Suitable for low-power applications, helping to maximize energy efficiency.

Maximum Forward Voltage (VF): 1.2 V

Ensures low voltage drop across the diode, reducing power losses and improving circuit efficiency.

Maximum Output Current: 0.1 A

Capable of handling moderate current levels, suitable for a wide range of electronic devices and applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

Provides sufficient voltage protection in reverse-biased conditions, ensuring the safety of the circuit.

Technical Specifications

Diodes & Rectifiers M1MA141WKT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.75 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.003 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA141WKT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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