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M1MA142WAT1

Onsemi

M1MA142WAT1 by Onsemi

M1MA142WAT1 by Onsemi is a common anode rectifier diode with 2 elements, featuring a max forward voltage of 1.2V and output current of 0.1A. With a small outline package style, it is suitable for applications requiring fast reverse recovery time of 0.01us, such as in surface mount designs for electronics operating up to 150 °C.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 96,000 parts In-Stock

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$0.030

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$0.025

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$0.023

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$0.030

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DigiKey

USA . 96,000 parts In-Stock

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$0.040

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$0.040

Verical

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Digiode

USA . 326 parts In-Stock

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Vyrian

USA . 2,246 parts In-Stock

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DigiKey Marketplace

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Bristol Electronics

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Atlantic Semiconductor

USA . 12,000 parts In-Stock

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Prism Electronics

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Corphita

USA . 262 parts In-Stock

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$0.022

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Corohmni

South Africa . 253 parts In-Stock

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Continental Prestige Electronics

USA . 96,000 parts In-Stock

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RC Electronics

USA . 50,000 parts In-Stock

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$0.050

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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SupplyDigital Components

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TANS Electronics

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Metaverse IC Inc.

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Overview

Experience the superior quality and reliability of the M1MA142WAT1 diode by Onsemi, a trusted manufacturer in the industry. Ideal for a wide range of applications, this common anode diode offers customers exceptional value with its fast reverse recovery time and high power dissipation capabilities. With a maximum repetitive peak reverse voltage of 80V and a maximum output current of 0.1A, this diode is designed to meet your performance needs while ensuring long-lasting durability. Upgrade your electronic projects with the M1MA142WAT1 and discover the difference that quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the diode, making it suitable for a variety of applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient and reliable current flow in the circuit.

Surface Mount: YES

Being surface mountable makes installation and assembly easier, especially in compact electronic devices.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time ensures minimal energy loss and efficient operation of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on circuit boards and ensures space-saving design.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode to the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance of 150 °C allows for reliable performance even in demanding conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good conductivity and solderability for easy and secure installation.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options on the circuit board.

Maximum Power Dissipation: 0.15 W

With a maximum power dissipation of 0.15W, the diode can handle moderate power loads efficiently.

Maximum Time At Peak Reflow Temperature (s): 30

The diode can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 235

The peak reflow temperature tolerance of 235 °C enables secure and stable soldering of the diode.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for converting AC to DC with low forward voltage drop, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low maximum forward voltage of 1.2V ensures efficient conversion of AC to DC with minimal energy loss.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1A, the diode can handle moderate current loads effectively.

Terminal Form: GULL WING

The gull wing terminal form provides secure and stable connection to the circuit board during installation.

No. of Elements: 2

Having 2 elements allows for efficient current flow and operation of the diode.

Maximum Repetitive Peak Reverse Voltage: 80 V

The high repetitive peak reverse voltage of 80V makes the diode suitable for applications requiring high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 500 A

The diode can handle high non-repetitive peak forward currents of up to 500A, making it suitable for surge protection in circuits.

Diode Element Material: SILICON

Being made of silicon, the diode offers reliable and stable performance in a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers M1MA142WAT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA142WAT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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