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M1MA142WKT3

Onsemi

M1MA142WKT3 by Onsemi

M1MA142WKT3 by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.003 us. This small outline rectifier diode has a max forward voltage of 1.2V and is suitable for applications requiring a max operating temperature of 150 °C, such as power supplies and battery chargers.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,116 parts In-Stock

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Digiode

USA . 878 parts In-Stock

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Kulean Microsystems

USA . 6,756 parts In-Stock

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SupplyDigital Components

Austria . 4,635 parts In-Stock

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TANS Electronics

Latvia . 2,581 parts In-Stock

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Corphita

USA . 2,337 parts In-Stock

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Problanco Electronics

Mexico . 1,897 parts In-Stock

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UHIMA Technologies

Türkiye . 313 parts In-Stock

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Corohmni

South Africa . 235 parts In-Stock

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Overview

Experience unmatched quality and performance with the M1MA142WKT3 diode rectifier from Onsemi. As a leading manufacturer in the industry, Onsemi ensures reliability and innovation in every product. Ideal for a wide range of applications, this diode offers fast and efficient operation, making it perfect for your electronic projects. Get the value you deserve with the M1MA142WKT3, providing customers with top-notch benefits and advantages that will take your designs to the next level. Trust Onsemi for all your diode and rectifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration and connection in circuits, enhancing overall performance.

Surface Mount: YES

Enables easy and efficient installation on PCBs, saving time and effort.

Maximum Reverse Recovery Time: 0.003 us

Ensures fast switching and efficiency in operations.

Package Shape: RECTANGULAR

Facilitates compact and space-saving design in electronic devices.

No. of Terminals: 3

Provides flexibility in circuit connections and arrangements.

Package Style (Meter): SMALL OUTLINE

Ideal for applications with limited space or strict size requirements.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in different environments.

Terminal Finish: TIN LEAD

Enhances solderability and conductivity for better electrical connections.

Terminal Position: DUAL

Allows for versatile mounting options and ease of installation.

Maximum Power Dissipation: 0.15 W

Efficiently handles power dissipation, preventing overheating and damage.

Diode Type: RECTIFIER DIODE

Designed for converting AC to DC, making it suitable for various electronic applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 0.1 A

Capable of handling moderate current levels, suitable for many circuits.

Terminal Form: GULL WING

Provides secure soldering and robust mechanical strength.

No. of Elements: 2

Dual elements allow for expanded functionality and performance.

Maximum Repetitive Peak Reverse Voltage: 80 V

Suitable for applications requiring high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 500 A

Capable of handling short-term high current surges without damage.

Diode Element Material: SILICON

Silicon material ensures high reliability and stability in performance.

Technical Specifications

Diodes & Rectifiers M1MA142WKT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.003 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

M1MA142WKT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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