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M1MA142KT1G

Onsemi

M1MA142KT1G by Onsemi

M1MA142KT1G by Onsemi is a single rectifier diode with a max forward voltage of 1.2V and output current of 0.1A. It has a small outline package style, operates at up to 150°C, and features a peak reflow temperature of 260°C. Ideal for applications requiring fast reverse recovery time and low power dissipation in surface-mount designs.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 74,500 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

74,500

-

$0.053

$0.044

$0.039

DigiKey

USA . 74,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

74,500

-

-

-

$0.070

Verical

USA . 74,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.049

74,500

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,248 parts In-Stock

1+ parts

$0.041

100+ parts

-

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1,248

$0.041

-

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Vyrian

USA . 2,058 parts In-Stock

1+ parts

$0.043

100+ parts

-

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2,058

$0.043

-

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DigiKey Marketplace

USA . 74,550 parts In-Stock

1+ parts

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100+ parts

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74,550

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Distributors (Availability)

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Corphita

USA . 1,494 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

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1,494

$0.039

-

-

-

Corohmni

South Africa . 231 parts In-Stock

1+ parts

$0.043

100+ parts

-

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231

$0.043

-

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Continental Prestige Electronics

USA . 74,550 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.049

10k+ parts

-

74,550

-

-

$0.049

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,099 parts In-Stock

1+ parts

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10,099

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TANS Electronics

Latvia . 7,254 parts In-Stock

1+ parts

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7,254

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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Problanco Electronics

Mexico . 3,595 parts In-Stock

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3,595

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Kulean Microsystems

USA . 1,410 parts In-Stock

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1,410

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SupplyDigital Components

Austria . 1,075 parts In-Stock

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1,075

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UHIMA Technologies

Türkiye . 138 parts In-Stock

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138

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Overview

Unleash the power of innovation with the M1MA142KT1G by Onsemi, a top-of-the-line diode and rectifier that exceeds industry standards for quality and reliability. Manufactured by Onsemi, a trusted name in the electronic components industry, this product offers unparalleled performance and efficiency. Ideal for a wide range of applications, this diode is a game-changer for those seeking superior electrical conductivity and seamless operation. Experience the difference with Onsemi's M1MA142KT1G - where quality meets value, delivering unmatched benefits and advantages to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration simplifies the setup and installation of the diode, making it easy to use.

Surface Mount: YES

Surface mount capability enables easy and efficient mounting on circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.003 us

Fast reverse recovery time ensures efficient switching and reduces power loss in the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy and compact integration into circuit designs.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode to the circuit and enables multiple connection options.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for denser designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in challenging conditions.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connections in the circuit design.

Maximum Power Dissipation: 0.15 W

Low power dissipation helps in reducing heat generation and improves energy efficiency of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents damage to the diode during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and connection reliability.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC current with minimum voltage drop, making them suitable for various applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage ensures efficient conversion of alternating current to direct current with minimal energy loss.

Maximum Output Current: 0.1 A

Capable of handling a maximum output current of 0.1 A, making it suitable for low to moderate power applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and reliable solder connections for the diode.

Maximum Repetitive Peak Reverse Voltage: 80 V

Can withstand a maximum repetitive peak reverse voltage of 80 V, making it suitable for various circuit designs.

Maximum Non Repetitive Peak Forward Current: 0.5 A

Capable of handling a maximum non-repetitive peak forward current of 0.5 A, ensuring reliable performance during peak loads.

Diode Element Material: SILICON

Silicon diode element material ensures high efficiency and reliability in converting AC to DC current.

Technical Specifications

Diodes & Rectifiers M1MA142KT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.003 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA142KT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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