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M1MA142WKT1

Onsemi

M1MA142WKT1 by Onsemi

M1MA142WKT1 by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.003 us. With a max operating temperature of 150 °C, it is suitable for rectifier applications. This small outline package has a peak reflow temperature of 235°C and can handle a max output current of 0.1 A.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,307 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

13,307

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$0.030

$0.025

$0.023

DigiKey

USA . 13,307 parts In-Stock

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$0.040

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$0.040

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Digiode

USA . 2,250 parts In-Stock

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$0.024

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$0.024

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Vyrian

USA . 1,153 parts In-Stock

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$0.025

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$0.025

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ComSIT Distribution GmbH

Germany . 13,500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,143 parts In-Stock

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R&J Components

USA . 2,872 parts In-Stock

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PC Components Company LLC

USA . 2,360 parts In-Stock

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Bristol Electronics

USA . 2,360 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.013

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$0.012

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$0.011

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100

$0.013

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Corphita

USA . 348 parts In-Stock

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$0.022

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Corohmni

South Africa . 174 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,095 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Alle Elektronik GmbH

Germany . 4,730 parts In-Stock

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

UK . 3,143 parts In-Stock

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Glotronic Ltd.

UK . 2,514 parts In-Stock

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SupplyDigital Components

Austria . 2,176 parts In-Stock

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Problanco Electronics

Mexico . 1,686 parts In-Stock

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UHIMA Technologies

Türkiye . 706 parts In-Stock

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TANS Electronics

Latvia . 526 parts In-Stock

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Overview

Looking for high-quality diodes and rectifiers? Look no further than the M1MA142WKT1 by Onsemi. With a reputation for excellence, Onsemi ensures that their products are reliable and efficient. The M1MA142WKT1 is designed for common cathode applications with two elements, making it versatile for various electronic projects. Its small outline package makes it easy to incorporate into any design. Whether you're working on power supplies, battery chargers, or voltage regulators, this rectifier diode will deliver exceptional performance. Trust Onsemi to provide the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for a variety of environments.

Maximum Reverse Recovery Time: 0.003 us

Fast reverse recovery time ensures efficient operation and minimizes energy loss in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications that require reliable performance in harsh conditions.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensuring efficient conversion of AC to DC voltage in circuits.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop reduces power loss and heat dissipation, making the diodes energy-efficient.

Maximum Output Current: 0.1 A

Capable of handling moderate output currents, suitable for various low to medium power applications.

Technical Specifications

Diodes & Rectifiers M1MA142WKT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.003 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA142WKT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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