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M1MA151/2AT1

Onsemi

M1MA151/2AT1 by Onsemi

M1MA151/2AT1 by Onsemi is a single rectifier diode with a max output current of 0.1A and a max repetitive peak reverse voltage of 40V. It has a small outline package style, operates at up to 150 °C, and features a surface-mount design for various applications in electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,301 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 8,079 parts In-Stock

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Problanco Electronics

Mexico . 6,867 parts In-Stock

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Kulean Microsystems

USA . 6,520 parts In-Stock

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TANS Electronics

Latvia . 3,614 parts In-Stock

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Corphita

USA . 771 parts In-Stock

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UHIMA Technologies

Türkiye . 727 parts In-Stock

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Corohmni

South Africa . 328 parts In-Stock

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Overview

Enhance your electronic projects with the M1MA151/2AT1 diode by Onsemi, a top-quality manufacturer known for their reliable components. This diode offers seamless performance in a range of applications, from power supplies to voltage regulation. With a fast reverse recovery time and high repetitive peak reverse voltage, this diode ensures efficiency and durability in every use. Trust Onsemi to deliver excellence in every component, and experience the difference in your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.003 us

Fast reverse recovery time ensures efficient operation and minimizes power loss in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows use in different environmental conditions without performance issues.

Maximum Power Dissipation: 0.2 W

Efficient power dissipation capability ensures the diode can handle high power loads without overheating.

Maximum Output Current: 0.1 A

Suitable for low current applications where precision and reliability are important.

Maximum Repetitive Peak Reverse Voltage: 40 V

Can handle high voltage reversals without breakdown, ensuring long-term reliability.

Technical Specifications

Diodes & Rectifiers M1MA151/2AT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.003 us

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

M1MA151/2AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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