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M1MA142WAT3

Onsemi

M1MA142WAT3 by Onsemi

M1MA142WAT3 by Onsemi is a common anode rectifier diode with 2 elements, featuring a max reverse recovery time of 0.01 us and max forward voltage of 1.2V. It is designed for applications requiring small outline surface mount diodes, with a max operating temperature of 150 °C suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,539 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 7,911 parts In-Stock

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SupplyDigital Components

Austria . 5,290 parts In-Stock

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Kulean Microsystems

USA . 3,328 parts In-Stock

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Problanco Electronics

Mexico . 1,766 parts In-Stock

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Corohmni

South Africa . 305 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 176 parts In-Stock

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Overview

Enhance your electronic designs with the M1MA142WAT3 diode by Onsemi. With a focus on quality and reliability, Onsemi is a trusted manufacturer in the industry. This diode offers high performance in a compact package, making it ideal for a variety of applications. Whether you're working on power supplies, voltage regulation, or signal processing, this diode delivers value and efficiency. Upgrade your projects and experience the benefits of superior technology with the M1MA142WAT3 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON ANODE, 2 ELEMENTS

Allows for efficient and reliable operation of the diodes in common anode configuration with 2 elements.

Surface Mount: YES

Ease of installation in surface mount applications, saving time and effort during assembly.

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures quick response and efficient performance of the diodes.

Package Shape: RECTANGULAR

Space-saving design that fits well in compact electronic devices.

No. of Terminals: 3

Provides multiple connection points for versatile applications.

Package Style (Meter): SMALL OUTLINE

Compact size for easy integration into electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a variety of environments and applications.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and resistance to corrosion.

Terminal Position: DUAL

Versatile terminal position allows for flexibility in circuit design.

Maximum Power Dissipation: 0.15 W

Efficient power dissipation capability for reliable performance under load.

Diode Type: RECTIFIER DIODE

Designed for rectification of alternating current into direct current, essential for many electronic applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 0.1 A

Capable of handling moderate current levels for various electronic circuits.

Terminal Form: GULL WING

Easy to solder onto printed circuit boards, ensuring secure connections.

No. of Elements: 2

2 diode elements provide redundancy and reliability in circuit operation.

Maximum Repetitive Peak Reverse Voltage: 80 V

Can withstand high reverse voltages, suitable for a wide range of applications.

Maximum Non Repetitive Peak Forward Current: 500 A

Capable of handling high peak currents for reliable performance under surges.

Diode Element Material: SILICON

Silicon material offers good electrical and thermal conduction properties for efficient diode operation.

Technical Specifications

Diodes & Rectifiers M1MA142WAT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

M1MA142WAT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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