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M1MA141WAT1

Onsemi

M1MA141WAT1 by Onsemi

M1MA141WAT1 by Onsemi is a common anode rectifier diode with 2 elements, featuring a max forward voltage of 1.2V and output current of 0.1A. With a small outline package style, it is suitable for applications requiring fast reverse recovery time of 0.01us, such as in power supplies and electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 68,000 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

68,000

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$0.030

$0.025

$0.023

Verical

USA . 68,000 parts In-Stock

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68,000

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Digiode

USA . 496 parts In-Stock

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$0.024

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496

$0.024

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Vyrian

USA . 69 parts In-Stock

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$0.025

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69

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DigiKey Marketplace

USA . 68,000 parts In-Stock

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Electronics Depot

USA . 5,340 parts In-Stock

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5,340

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Lakeland Logistics Inc

USA . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 377 parts In-Stock

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$0.022

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377

$0.022

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Corohmni

South Africa . 162 parts In-Stock

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$0.025

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162

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Continental Prestige Electronics

USA . 68,000 parts In-Stock

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$0.011

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$0.011

QUARKTWIN TECHNOLOGY LTD

USA . 28,296 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 7,934 parts In-Stock

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SupplyDigital Components

Austria . 7,611 parts In-Stock

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Kulean Microsystems

USA . 6,871 parts In-Stock

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Problanco Electronics

Mexico . 5,720 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 77 parts In-Stock

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77

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Overview

Discover the power of the M1MA141WAT1 by Onsemi, a top-tier manufacturer known for its superior quality diodes & rectifiers. With common anode configuration and dual elements, this product offers unparalleled performance in a compact, surface mount package. Ideal for a wide range of applications, this rectifier diode boasts a maximum forward voltage of 1.2V and maximum output current of 0.1A, providing customers with efficient and reliable solutions. Upgrade your projects with the M1MA141WAT1 and experience the benefits of advanced technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for a variety of applications.

Surface Mount: YES

Allows for easier and more efficient installation on circuit boards.

Maximum Reverse Recovery Time: 0.01 us

Ensures quick response times for improved performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without issues, increasing reliability.

Maximum Power Dissipation: 0.15 W

Efficient power handling capability for sustained operation.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring optimal performance.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop for energy efficiency.

Maximum Output Current: 0.1 A

Able to handle moderate current levels for various circuit requirements.

Maximum Repetitive Peak Reverse Voltage: 40 V

Can withstand high reverse voltages, providing protection for the circuit.

Diode Element Material: SILICON

Reliable and widely used material for diodes, ensuring long-term performance.

Technical Specifications

Diodes & Rectifiers M1MA141WAT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA141WAT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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