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M1MA141WAT1G

Onsemi

M1MA141WAT1G by Onsemi

M1MA141WAT1G by Onsemi is a common anode rectifier diode with 2 elements, featuring a max reverse recovery time of 0.01 us and max output current of 0.1 A. It is designed for applications requiring a small outline package style, such as surface mount electronics where low power dissipation and high breakdown voltage are essential.

Median Price

$0.019

Lifecycle Status

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16

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1k+

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Arrow

USA . 23,899 parts In-Stock

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$0.015

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$0.015

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Mouser Electronics

USA . 6,483 parts In-Stock

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$0.100

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$0.033

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$0.030

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$0.019

6,483

$0.100

$0.033

$0.030

$0.019

DigiKey

USA . 9,215 parts In-Stock

1+ parts

$0.160

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$0.060

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$0.038

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$0.026

9,215

$0.160

$0.060

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$0.026

Rochester

USA . 135,000 parts In-Stock

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$0.019

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$0.015

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$0.014

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Verical

USA . 93,000 parts In-Stock

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Flip Electronics (Authorized)

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Chip1Stop

Japan . 29,699 parts In-Stock

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$0.019

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$0.019

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Distributors (In-Stock)

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Vyrian

USA . 701 parts In-Stock

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$0.012

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Digiode

USA . 2,140 parts In-Stock

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Bristol Electronics

USA . 18,000 parts In-Stock

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$0.115

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$0.057

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$0.011

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$0.115

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$0.011

Flip Electronics

USA . 33,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 18,000 parts In-Stock

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Dan-Mar Components

USA . 18,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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Electronics Depot

USA . 2,146 parts In-Stock

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Speed Components Ltd

Israel . 1,200 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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$0.012

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Corphita

USA . 1,974 parts In-Stock

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Component Stockers USA

USA . 74,428 parts In-Stock

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$0.010

Continental Prestige Electronics

USA . 42,000 parts In-Stock

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Perfect Parts

USA . 23,078 parts In-Stock

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SupplyDigital Components

Austria . 7,360 parts In-Stock

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TANS Electronics

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Problanco Electronics

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 331 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Discover the M1MA141WAT1G by Onsemi, a top-quality diode and rectifier that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product is perfect for a wide range of applications. With its common anode configuration, small outline package style, and dual terminal position, this diode delivers superior results in a compact design. Experience the benefits of fast reverse recovery time, low reverse current, and high power dissipation capabilities. Trust Onsemi to provide you with the value and quality you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good electrical insulation and mechanical strength, making the product durable and reliable

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for easy circuit integration and efficient operation

Surface Mount: YES

Surface mount feature enables easy and convenient installation on PCBs, saving space and assembly time

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures efficient switching performance and reduces power loss in the circuit

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal leakage and improves overall efficiency of the diode

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and soldering on the PCB

Reverse Test Voltage: 35 V

Higher reverse test voltage provides better protection against voltage spikes and surges in the circuit

No. of Terminals: 3

Having 3 terminals allows for additional connection options and flexibility in circuit design

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact electronic devices

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures stable performance under varying environmental conditions

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance for long-term reliability

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and easy connection to other components

Maximum Power Dissipation: 0.15 W

Low power dissipation helps in minimizing heat generation and improving overall efficiency of the diode

Minimum Breakdown Voltage: 40 V

High minimum breakdown voltage ensures reliable operation under high voltage conditions

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature helps in preventing damage to the diode during soldering process

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance makes the diode suitable for lead-free soldering processes

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC and various power supply applications

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop ensures efficient conversion of alternating current to direct current

Maximum Output Current: 0.1 A

High maximum output current rating allows for handling higher current loads in the circuit

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and ease of soldering during assembly

No. of Elements: 2

Having 2 elements allows for more precise control and higher efficiency in the circuit design

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage rating ensures durability and reliability under reverse voltage conditions

Maximum Non Repetitive Peak Forward Current: 0.5 A

Ability to handle high non-repetitive peak forward current makes the diode suitable for surge protection applications

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and efficiency in rectification processes

Technical Specifications

Diodes & Rectifiers M1MA141WAT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

40 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA141WAT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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