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M1MA142KT1

Onsemi

M1MA142KT1 by Onsemi

M1MA142KT1 by Onsemi is a single rectifier diode with a max forward voltage of 1.2V and output current of 0.1A. It has a small outline package style, operates at up to 150 °C, and is suitable for applications requiring fast reverse recovery time such as power supplies and converters.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 92,944 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

92,944

-

$0.030

$0.025

$0.023

DigiKey

USA . 92,944 parts In-Stock

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$0.040

92,944

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$0.040

Distributors (In-Stock)

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Digiode

USA . 439 parts In-Stock

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$0.024

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439

$0.024

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Vyrian

USA . 165 parts In-Stock

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$0.025

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165

$0.025

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DigiKey Marketplace

USA . 105,055 parts In-Stock

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Bristol Electronics

USA . 12,155 parts In-Stock

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Dan-Mar Components

USA . 12,155 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,259 parts In-Stock

1+ parts

$0.022

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-

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1,259

$0.022

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Corohmni

South Africa . 425 parts In-Stock

1+ parts

$0.025

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425

$0.025

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.209

100+ parts

$0.190

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$0.171

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450

$0.209

$0.190

$0.171

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Component Stockers USA

USA . 657 parts In-Stock

1+ parts

$99.990

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657

$99.990

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Continental Prestige Electronics

USA . 105,055 parts In-Stock

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$0.024

105,055

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$0.024

RC Electronics

USA . 54,000 parts In-Stock

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$0.030

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$0.030

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$0.030

54,000

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$0.030

$0.030

$0.030

QUARKTWIN TECHNOLOGY LTD

USA . 8,813 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,333 parts In-Stock

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SupplyDigital Components

Austria . 4,776 parts In-Stock

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Problanco Electronics

Mexico . 4,017 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,555 parts In-Stock

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TANS Electronics

Latvia . 2,404 parts In-Stock

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Kulean Microsystems

USA . 660 parts In-Stock

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UHIMA Technologies

Türkiye . 458 parts In-Stock

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458

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Overview

Discover the power of the M1MA142KT1 by Onsemi, a top-quality rectifier diode designed for maximum performance in a compact package. With Onsemi's reputation for excellence and innovation, this diode offers unparalleled reliability and efficiency for a wide range of applications. From power supplies to automotive electronics, this diode delivers exceptional value, benefits, and advantages to customers looking for high-quality components they can trust. Experience the difference with the M1MA142KT1 and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various operating environments.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easy to use in applications requiring a single diode.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Recovery Time: 0.003 us

The fast reverse recovery time ensures efficient operation and minimal energy loss, making the diode ideal for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design that saves space and allows for easy integration into circuit layouts.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options, enabling the diode to be easily incorporated into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for designs where size constraints are a concern.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diode can withstand elevated temperatures without compromising performance, ensuring reliability in demanding conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and conductivity, ensuring a reliable connection in the PCB assembly process.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and circuit design, allowing for easier integration into various applications.

Maximum Power Dissipation: 0.15 W

The low power dissipation helps in reducing heat generation and improves efficiency, making the diode energy-efficient.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature simplifies the soldering process and reduces the risk of thermal damage to the diode.

Peak Reflow Temperature °C: 235

The high peak reflow temperature tolerance allows for reliable soldering during the assembly, ensuring a strong and durable connection.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it allows for converting AC to DC efficiently, making it suitable for rectification and power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop helps minimize energy loss and improves efficiency in the diode operation.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1 A, the diode can handle moderate current loads, making it suitable for low to medium power applications.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy surface mounting on the PCB, ensuring a secure connection and reliable performance.

Maximum Repetitive Peak Reverse Voltage: 80 V

The high repetitive peak reverse voltage rating makes the diode suitable for applications where voltage spikes or reverse polarity protection is required.

Maximum Non Repetitive Peak Forward Current: 500 A

The ability to withstand high non-repetitive peak forward current ensures the diode can handle surge currents without damage, improving reliability in transient conditions.

Diode Element Material: SILICON

Silicon is a commonly used diode element material known for its reliability, high efficiency, and robustness, making it a trusted choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers M1MA142KT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.003 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

M1MA142KT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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