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M1MA141WAT3

Onsemi

M1MA141WAT3 by Onsemi

M1MA141WAT3 by Onsemi is a common anode rectifier diode with 2 elements, featuring a max forward voltage of 1.2V and output current of 0.1A. With a small outline package style and surface mount capability, it is ideal for applications requiring fast reverse recovery time such as power supplies and voltage regulators.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,529 parts In-Stock

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1,529

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Digiode

USA . 390 parts In-Stock

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390

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Problanco Electronics

Mexico . 7,170 parts In-Stock

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SupplyDigital Components

Austria . 4,433 parts In-Stock

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Kulean Microsystems

USA . 3,643 parts In-Stock

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Corphita

USA . 2,311 parts In-Stock

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TANS Electronics

Latvia . 1,670 parts In-Stock

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UHIMA Technologies

Türkiye . 126 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Overview

Discover the M1MA141WAT3 by Onsemi, a top-quality diode rectifier that offers exceptional performance and reliability. With a common anode configuration and two elements, this rectifier is perfect for various applications. The small outline package makes it easy to install, while the maximum operating temperature of 150 °C ensures durability. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Experience the benefits of fast reverse recovery time and low forward voltage, providing excellent efficiency and performance. Upgrade your electronic projects with the M1MA141WAT3 and see the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort.

Maximum Reverse Recovery Time: 0.01 us

Ensures fast switching speeds, making this product suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it reliable in various operating conditions.

Maximum Power Dissipation: 0.15 W

Efficient power handling capability and low power dissipation, contributing to energy efficiency.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop minimizes power loss and enhances the efficiency of the product.

Maximum Output Current: 0.1 A

Suitable for low current applications, providing precise and stable output.

Maximum Repetitive Peak Reverse Voltage: 40 V

Provides a high reverse voltage rating, ensuring safety and reliability in the circuit.

Diode Element Material: SILICON

Silicon diodes offer stable and consistent performance, making them a popular choice for rectification applications.

Technical Specifications

Diodes & Rectifiers M1MA141WAT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

M1MA141WAT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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