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FFSH4065BDN-F085

Onsemi

FFSH4065BDN-F085 by Onsemi

FFSH4065BDN-F085 by Onsemi is a Schottky rectifier diode with 2 elements, 650V reverse test voltage, and 20A output current. It is commonly used for efficiency applications due to its high power dissipation of 127W and low forward voltage of 1.7V. Operating temperature ranges from -55°C to 175°C making it suitable for various industrial environments.

Median Price

$8.835

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 675 parts In-Stock

1+ parts

$13.310

100+ parts

-

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675

$13.310

-

-

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DigiKey

USA . 140 parts In-Stock

1+ parts

$13.310

100+ parts

$8.073

1k+ parts

$6.687

10k+ parts

-

140

$13.310

$8.073

$6.687

-

Chip1Stop

Japan . 770 parts In-Stock

1+ parts

$39.100

100+ parts

$19.100

1k+ parts

$14.100

10k+ parts

-

770

$39.100

$19.100

$14.100

-

RS (Exports)

UK . 515 parts In-Stock

1+ parts

-

100+ parts

$9.307

1k+ parts

-

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515

-

$9.307

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Future Electronics

Canada . 450 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$6.670

10k+ parts

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450

-

-

$6.670

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Rochester

USA . 366 parts In-Stock

1+ parts

-

100+ parts

$6.690

1k+ parts

$5.980

10k+ parts

$5.630

366

-

$6.690

$5.980

$5.630

Verical

USA . 366 parts In-Stock

1+ parts

-

100+ parts

$8.363

1k+ parts

$7.475

10k+ parts

$7.037

366

-

$8.363

$7.475

$7.037

Arrow

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$6.797

1k+ parts

-

10k+ parts

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150

-

$6.797

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Distributors (In-Stock)

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Digiode

USA . 250 parts In-Stock

1+ parts

$7.058

100+ parts

-

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250

$7.058

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IBS Electronics

USA . 450 parts In-Stock

1+ parts

$9.046

100+ parts

-

1k+ parts

$14.263

10k+ parts

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450

$9.046

-

$14.263

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Maritex

Poland . 14 parts In-Stock

1+ parts

$9.292

100+ parts

-

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14

$9.292

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Vyrian

USA . 4,749 parts In-Stock

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4,749

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NAC Semi

USA . 900 parts In-Stock

1+ parts

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$12.130

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900

-

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$12.130

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Flip Electronics

USA . 450 parts In-Stock

1+ parts

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1k+ parts

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 368 parts In-Stock

1+ parts

$0.107

100+ parts

-

1k+ parts

-

10k+ parts

$0.103

368

$0.107

-

-

$0.103

Northwest PG Solutions

USA . 702 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

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10k+ parts

$0.104

702

$0.118

-

-

$0.104

Corphita

USA . 1,858 parts In-Stock

1+ parts

$6.687

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1,858

$6.687

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Corohmni

South Africa . 453 parts In-Stock

1+ parts

$6.930

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453

$6.930

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Microchip USA

USA . 5,509 parts In-Stock

1+ parts

$34.360

100+ parts

$33.870

1k+ parts

$33.620

10k+ parts

$33.370

5,509

$34.360

$33.870

$33.620

$33.370

Kulean Microsystems

USA . 8,116 parts In-Stock

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8,116

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SupplyDigital Components

Austria . 4,151 parts In-Stock

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4,151

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Problanco Electronics

Mexico . 4,031 parts In-Stock

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4,031

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TANS Electronics

Latvia . 1,540 parts In-Stock

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1,540

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Perfect Parts

USA . 1,207 parts In-Stock

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1,207

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UHIMA Technologies

Türkiye . 460 parts In-Stock

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460

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Overview

Discover the unparalleled quality and reliability of the FFSH4065BDN-F085 by Onsemi, a leading manufacturer in the industry of Diodes & Rectifiers. This powerful component boasts a common cathode configuration with 2 elements and a maximum reverse test voltage of 650V, making it ideal for efficiency-driven applications. With a maximum power dissipation of 127W and a maximum output current of 20A, this Schottky diode offers unmatched performance and value to customers seeking optimal power management solutions. Trust Onsemi to deliver cutting-edge technology and superior products for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, making them suitable for various environments and applications.

Maximum Reverse Current: 40 uA

Low reverse current ensures minimal power loss and high efficiency in the operation of the diodes.

Reverse Test Voltage: 650 V

High reverse test voltage allows the diodes to withstand high voltages, making them reliable for demanding applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the diodes can operate effectively in harsh conditions without overheating.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, enhancing the efficiency and performance of the diodes.

Technical Specifications

Diodes & Rectifiers FFSH4065BDN-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

84 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

127 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH4065BDN-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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