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FFSH40120A

Onsemi

FFSH40120A by Onsemi

FFSH40120A by Onsemi is a single rectifier diode with 1200V reverse test voltage and 61A output current. It has a max power dissipation of 682W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175 °C, this silicon carbide diode is ideal for various industrial uses.

Median Price

$14.242

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 370 parts In-Stock

1+ parts

$21.240

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-

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370

$21.240

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Rochester

USA . 2,420 parts In-Stock

1+ parts

-

100+ parts

$12.660

1k+ parts

$11.330

10k+ parts

$10.660

2,420

-

$12.660

$11.330

$10.660

Verical

USA . 2,040 parts In-Stock

1+ parts

-

100+ parts

$15.825

1k+ parts

$14.162

10k+ parts

-

2,040

-

$15.825

$14.162

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Future Electronics

Canada . 20 parts In-Stock

1+ parts

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$7.460

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20

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$7.460

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Distributors (In-Stock)

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Digiode

USA . 1,214 parts In-Stock

1+ parts

$13.386

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1,214

$13.386

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Vyrian

USA . 5,227 parts In-Stock

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5,227

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IBS Electronics

USA . 20 parts In-Stock

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$10.463

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20

-

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$10.463

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Distributors (Availability)

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Native Components

USA . 395 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

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10k+ parts

$0.111

395

$0.116

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$0.111

Northwest PG Solutions

USA . 1,420 parts In-Stock

1+ parts

$0.127

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-

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$0.112

1,420

$0.127

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$0.112

Corphita

USA . 536 parts In-Stock

1+ parts

$12.681

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536

$12.681

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Corohmni

South Africa . 264 parts In-Stock

1+ parts

$14.090

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264

$14.090

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Microchip USA

USA . 8,472 parts In-Stock

1+ parts

$47.748

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8,472

$47.748

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TANS Electronics

Latvia . 7,582 parts In-Stock

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7,582

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Kulean Microsystems

USA . 7,184 parts In-Stock

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SupplyDigital Components

Austria . 6,509 parts In-Stock

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6,509

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Problanco Electronics

Mexico . 5,748 parts In-Stock

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5,748

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Perfect Parts

USA . 1,542 parts In-Stock

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1,542

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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913

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Overview

Experience unparalleled efficiency and reliability with the FFSH40120A by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi delivers top-notch quality products that exceed expectations. This RECTIFIER DIODE is designed for high-performance applications, offering a maximum output current of 61 A and a Maximum Reverse Current of 200 uA. With a Maximum Repetitive Peak Reverse Voltage of 1200 V, this diode ensures optimal functionality even in extreme conditions. Trust Onsemi to provide you with the best-in-class solution for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good protection and durability for the diode, making it reliable for long-term use.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the diode to withstand heat and operate in a wide range of environments.

Maximum Power Dissipation: 682 W

High power dissipation capability indicates that the diode can handle high power loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this diode suitable for various power conversion applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high thermal conductivity and allows for efficient power handling, making it a reliable choice for high-power applications.

Technical Specifications

Diodes & Rectifiers FFSH40120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

1550 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

61 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

682 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH40120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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