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FFSH10120A

Onsemi

FFSH10120A by Onsemi

FFSH10120A by Onsemi is a single Schottky rectifier diode with 1200V reverse test voltage and 17A output current. It operates b/w -55 to 175 °C, making it ideal for high-efficiency applications. The package style is flange mount with matte tin terminals in a rectangular shape.

Median Price

$8.230

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 339 parts In-Stock

1+ parts

$8.230

100+ parts

-

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$4.190

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339

$8.230

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$4.190

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DigiKey

USA . 401 parts In-Stock

1+ parts

$8.410

100+ parts

$4.901

1k+ parts

$3.661

10k+ parts

-

401

$8.410

$4.901

$3.661

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Flip Electronics (Authorized)

USA . 3,150 parts In-Stock

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Rochester

USA . 651 parts In-Stock

1+ parts

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100+ parts

$3.660

1k+ parts

$3.270

10k+ parts

$3.080

651

-

$3.660

$3.270

$3.080

Distributors (In-Stock)

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Digiode

USA . 2,486 parts In-Stock

1+ parts

$3.866

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2,486

$3.866

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Vyrian

USA . 3,224 parts In-Stock

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Flip Electronics

USA . 3,150 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 174 parts In-Stock

1+ parts

$3.663

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174

$3.663

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Corohmni

South Africa . 406 parts In-Stock

1+ parts

$4.070

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406

$4.070

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Native Components

USA . 301 parts In-Stock

1+ parts

$64.400

100+ parts

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10k+ parts

$61.824

301

$64.400

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$61.824

Northwest PG Solutions

USA . 2,152 parts In-Stock

1+ parts

$70.840

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$70.840

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QUARKTWIN TECHNOLOGY LTD

USA . 17,284 parts In-Stock

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Microchip USA

USA . 6,781 parts In-Stock

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Kulean Microsystems

USA . 5,477 parts In-Stock

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TANS Electronics

Latvia . 5,204 parts In-Stock

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Problanco Electronics

Mexico . 4,991 parts In-Stock

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Perfect Parts

USA . 4,238 parts In-Stock

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SupplyDigital Components

Austria . 3,090 parts In-Stock

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UHIMA Technologies

Türkiye . 828 parts In-Stock

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Kepictronics

USA . 806 parts In-Stock

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Overview

Experience unmatched efficiency and reliability with the FFSH10120A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality diodes and rectifiers that are designed for optimal performance. The FFSH10120A is perfect for applications requiring high power dissipation and low forward voltage drop, making it ideal for boosting efficiency in various electronic devices. Trust in Onsemi's expertise to provide you with a superior product that offers exceptional value and benefits, ensuring your projects run smoothly and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies circuit design and installation, making it easier to integrate into existing systems.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Package Shape: RECTANGULAR

Allows for easy placement and mounting in various applications.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable performance in high voltage applications.

No. of Terminals: 2

Simplifies wiring and connections, reducing complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and easy installation in different setups.

Application: EFFICIENCY

Designed for applications where efficiency is critical, optimizing power usage.

Maximum Operating Temperature: 175 °C

Withstands high temperatures, suitable for use in various environments.

Minimum Operating Temperature: -55 °C

Operates effectively even in low temperature conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable terminal finish for secure connections.

Terminal Position: SINGLE

Simplifies connection and ensures proper orientation during installation.

Maximum Power Dissipation: 193 W

Handles high power levels with efficiency, suitable for demanding applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring proper current flow in the circuit.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 17 A

Capable of handling high output currents, suitable for demanding applications.

Technology: SCHOTTKY

Schottky diode technology provides fast switching and low forward voltage drop for efficient operation.

Terminal Form: THROUGH-HOLE

Enables secure through-hole mounting for stable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Handles high reverse voltages reliably, suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 90 A

Capable of handling high peak currents for short durations, ensuring reliability under transient conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element provides high temperature stability and efficiency for reliable performance.

Technical Specifications

Diodes & Rectifiers FFSH10120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

17 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

193 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH10120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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