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CYIWOSC3000A

Onsemi

CYIWOSC3000A by Onsemi

Onsemi's CYIWOSC3000A is a 1/3-inch CMOS image sensor with 2.54x2.54 um pixel size, offering a dynamic range of 72 dB and operating temperatures from -30 to 70 °C. It features a max supply voltage of 3.1V, master clock at 50 MHz, and supports a frame rate of up to 30 fps. Ideal for applications requiring high-quality imaging in various environmental conditions.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Native Components

USA . 434 parts In-Stock

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Northwest PG Solutions

USA . 590 parts In-Stock

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TANS Electronics

Latvia . 2,703 parts In-Stock

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Problanco Electronics

Mexico . 1,960 parts In-Stock

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Kulean Microsystems

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Corphita

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SupplyDigital Components

Austria . 632 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Experience crystal clear imaging like never before with the CYIWOSC3000A by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and performance in every product they create. The CYIWOSC3000A is perfect for a wide range of applications, from security cameras to industrial machinery. With its high dynamic range and fast frame rate, this image sensor ensures sharp, detailed images in any environment. Trust Onsemi to provide you with the best in imaging technology, and elevate your projects to new heights with the CYIWOSC3000A.

Feature Benefit Bullets

Pixel Size (um): 2.54X2.54

The small pixel size allows for high resolution images with fine detail, making this image sensor suitable for applications where image quality is essential.

Maximum Supply Voltage: 3.1 V

The higher maximum supply voltage provides flexibility in power supply options and ensures stable operation of the image sensor.

Master Clock: 50 MHz

The high master clock frequency enables fast data readout and processing, leading to quick and efficient image capture.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for low power consumption, high sensitivity, and noise performance, making them a popular choice for various imaging applications.

Minimum Supply Voltage: 2.52 V

The low minimum supply voltage ensures that the image sensor can operate even in low power scenarios without compromising performance.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions, making it suitable for a wide range of applications.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature allows for reliable operation in cold environments, expanding the usability of this image sensor.

Dynamic Range: 72 dB

A high dynamic range enables the image sensor to capture both bright and dark areas in a scene accurately, resulting in high-quality images with excellent contrast.

Optical Format (inch): 1/3

The 1/3 inch optical format is a common size used in many imaging applications, providing compatibility and ease of integration with existing systems.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the communication and integration of the image sensor with other components, making it easier to use in various systems.

Frame Rate: 30 fps

A high frame rate of 30 frames per second allows for the capture of fast-moving objects or rapid changes in a scene, making this image sensor suitable for dynamic imaging applications.

Array Type: FRAME TRANSFER

The frame transfer array type enables simultaneous image capture and readout, reducing processing time and improving overall system performance.

Technical Specifications

Image Sensors CYIWOSC3000A attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME TRANSFER

Dynamic Range:

72 dB

Frame Rate:

30 fps

Master Clock:

50 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Pixel Size (um):

2.54X2.54

Sensors or Transducers Type:

Maximum Supply Voltage:

3.1 V

Minimum Supply Voltage:

2.52 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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