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CAT28F010GI-90TE13

Onsemi

CAT28F010GI-90TE13 by Onsemi

CAT28F010GI-90TE13 by Onsemi is a 128KX8 NOR Flash Memory with 1048576 bit density. It operates at 5V, has 90ns access time, and supports asynchronous mode. Ideal for industrial applications requiring fast parallel memory access in compact chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,705 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,904 parts In-Stock

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Problanco Electronics

Mexico . 6,756 parts In-Stock

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TANS Electronics

Latvia . 569 parts In-Stock

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Corphita

USA . 534 parts In-Stock

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Kulean Microsystems

USA . 477 parts In-Stock

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Northwest PG Solutions

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Native Components

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Corohmni

South Africa . 214 parts In-Stock

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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Overview

Experience the next level of performance and reliability with the CAT28F010GI-90TE13 by Onsemi. As a leading manufacturer in the industry, Onsemi's Flash Memory products are known for their superior quality and cutting-edge technology. Ideal for a wide range of applications, this Flash Memory offers unmatched value and benefits to customers looking for high-speed data storage solutions. Upgrade your systems with the CAT28F010GI-90TE13 and enjoy seamless operation and enhanced efficiency like never before. Make the smart choice and elevate your projects with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing and control, making it suitable for a variety of applications where precise timing is not critical.

Nominal Supply Voltage/Vsup (V): 5

With a nominal supply voltage of 5V, this flash memory is compatible with standard electronic systems and easy to integrate into existing designs.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40 °C ensures reliable performance even in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this flash memory energy-efficient and fast for data storage and retrieval.

No. of Words: 131072 words

With a large word capacity of 131072, this flash memory chip can store a vast amount of data, making it suitable for applications requiring extensive data storage.

Technical Specifications

Flash Memory CAT28F010GI-90TE13 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F010GI-90TE13 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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