Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BS107ARL1 by Onsemi is a N-CHANNEL FET with 200V DS breakdown voltage. It has 0.25A max drain current, 6.4 ohm RDS(on), and operates in enhancement mode for switching applications. The transistor comes in a cylindrical package with through-hole terminals, suitable for use at up to 150°C.
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VNN
Digiode
Nova Conductors
Vyrian
Ampacity Inc.
$6.050
AZTECH Wire
$14.406
QUARKTWIN TECHNOLOGY LTD
Problanco Electronics
Kulean Microsystems
SupplyDigital Components
Continental Prestige Electronics
TANS Electronics
Glotronic Ltd.
Corphita
Argo Parts USA
Corohmni
UHIMA Technologies
Bastille Electronics
Assy Fe
The use of plastic/epoxy makes this transistor lightweight and durable.
The N-channel design allows for efficient switching in various applications.
The built-in diode simplifies circuit design and improves efficiency.
Ideal for applications requiring fast switching speeds and high efficiency.
With a high breakdown voltage, this transistor can handle high voltages safely.
The round shape allows for easy installation and space-saving in tight layouts.
The through-hole terminals provide a secure connection to circuit boards.
Enhancement mode operation allows for precise control of the transistor's behavior.
Capable of handling currents up to 0.25 A for reliable performance in various applications.
The 3-terminal design simplifies circuit connections and allows for versatile use.
With a maximum power dissipation of 0.35 W, this transistor can handle moderate power levels.
The cylindrical package style offers a compact and efficient design.
Metal-oxide semiconductor technology ensures high performance and reliability.
Operates efficiently at temperatures up to 150°C.
Silicon material provides excellent electrical properties and reliability.
Tin/lead terminal finish ensures a reliable connection for long-term use.
Low on-resistance ensures minimal power loss and efficient operation.
Bottom terminal position facilitates easy mounting and installation in circuits.
Can withstand peak reflow temperatures for up to 30 seconds during assembly.
With a peak reflow temperature of 235°C, this transistor can endure soldering processes with ease.
Small Signal Field Effect Transistors (FET) BS107ARL1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BS107ARL1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Changzhou Starsea Electronics
Lite-on Semiconductor
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
STM32H743XIH6
STMicroelectronics
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
NC7WZ17P6X
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
Gulf Semiconductor
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
Weitronic Enterprise
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
2N7002DW
Transys Electronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
NDS0605
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Package Shape: RECTANGULAR;
FDC8602
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: MO-193AA;
BSS123
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;
FDV301N_NL
FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
BSS84
Changzhou Galaxy Century Microelectronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 50 V; Maximum Drain-Source On Resistance: 10 ohm;
BS170P
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Elements: 1; No. of Terminals: 3;
MMBF170LT1
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
BSS138NL6327
Infineon Technologies
BSS138NL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A drain current, and 3.5 ohm on-resistance. Ideal for small outline applications requiring a single transistor with built-in diode in enhancement mode operation. Suitable for use in automotive electronics due to AEC-Q101 reference standard compliance.
BSS84PL6327
BSS84PL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 8 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with max ID of 0.17A. With GULL WING terminals and built-in diode, it's suitable for various electronic devices.
SI4909DY-T1-GE3
Vishay Siliconix
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;
IRLML2402TRPBF-1
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Elements: 1; JESD-609 Code: e3;
FDV303N-F169
Onsemi
FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
IRFHS9351TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
Panjit International
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): .115 A;
SI2323DS-T1-BE3
Vishay Intertechnology's SI2323DS-T1-BE3 is a P-CHANNEL FET with 20V DS breakdown voltage and 3.7A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.039 ohm RDS(on) and 140pF Crss, suitable for surface mount designs at -55 to 150°C temperature range.
LBSS138LT1G
Leshan Radio
LBSS138LT1G by Leshan Radio is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.2A Drain Current, 3.5 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body, it's designed for surface mount installation at temperatures up to 150°C.
LND150N3-GP005
Microchip Technology
LND150N3-GP005 by Microchip is a N-CHANNEL FET with 0.03A ID and 1000Ω RDS(on). Ideal for switching applications, it operates in depletion mode with built-in diode. Featuring 3 terminals, cylindrical package style, and 1pF Crss, it is designed for efficient performance in various electronic circuits.
2N7002W
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
FDN360P
FDN360P by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 0.08 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 2A max drain current, this MOSFET has a small outline package style suitable for surface mount designs.
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BS107PSTZ
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JESD-30 Code: O-PBCY-W3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel;
BS107P
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Qualification: Not Qualified; Terminal Form: WIRE;
The Diodes Inc. BS107P is a N-CHANNEL FET with 200V DS Breakdown Voltage and 0.12A Drain Current. Ideal for applications requiring low power dissipation, such as automotive electronics due to AEC-Q101 standard compliance. Features include single configuration with built-in diode in a cylindrical package shape.
BS107PSTOB
BS107PSTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. With 200V DS Breakdown Voltage, it has 23 ohm Drain-Source On Resistance and 0.12A Drain Current. Its PLASTIC/EPOXY body, ENHANCEMENT MODE operation, and SILICON material make it ideal for various electronic circuits.
BS107PSTOA
BS107PSTOA by Zetex Plc is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 0.12A and 23 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. The transistor's PLASTIC/EPOXY body, RECTANGULAR shape, and WIRE terminals make it suitable for various electronic designs.
BS107A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Qualification: Not Qualified; JEDEC-95 Code: TO-92;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Power Dissipation Ambient: .83 W; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; JESD-609 Code: e0; Maximum Power Dissipation Ambient: .6 W;
BS107ARL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Maximum Drain Current (Abs) (ID): .25 A;
BS107AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
BS107ARL1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
BS107ARLRA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
BS107ARLRE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 200 V;
BS107ARLRM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6.4 ohm;
BS107
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 200 V; Maximum Drain Current (Abs) (ID): .13 A;
BS107ARLRP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Maximum Drain-Source On Resistance: 6.4 ohm; Terminal Position: BOTTOM;
BS107G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 200 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 6.4 ohm; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
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