Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
The Diodes Inc. BS107P is a N-CHANNEL FET with 200V DS Breakdown Voltage and 0.12A Drain Current. Ideal for applications requiring low power dissipation, such as automotive electronics due to AEC-Q101 standard compliance. Features include single configuration with built-in diode in a cylindrical package shape.
Median Price
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Authorized Procurement Solutions
iodParts Technologies Inc.
Robosynatics
$0.358
$0.350
Lucentia Tech
Provides durability and protection for the internal components, ensuring a longer lifespan for the product.
Offers efficient electron flow in the specified direction, enhancing the overall performance of the transistor.
Can handle high voltage applications, making it suitable for a variety of circuit designs.
Allows for easy installation and compatibility with standard mounting methods.
Provides improved performance characteristics such as lower conduction losses and higher switching speeds.
Sufficient current handling capability for small signal applications, ensuring reliable operation.
Efficiently dissipates heat generated during operation, preventing overheating and extending the product's lifespan.
Provides improved electrical performance and reliability compared to other transistor technologies.
Can withstand high temperature environments, making it suitable for a wide range of applications.
Low on-resistance allows for efficient power transfer and minimal voltage drop across the transistor.
Small Signal Field Effect Transistors (FET) BS107P attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
BS107P Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
2N2222A
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMMBT3904LT1G
Onsemi
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SSL-LXA228SRC-TR11
Lumex
SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Db Lectro
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Shenzhen Socay Electronics
BAV99
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Infinex
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
Synsemi
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
LND150N3-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .03 A; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY;
NDC7002N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Power Dissipation Ambient: 1.4 W; Maximum Operating Temperature: 150 Cel;
FDS4435BZ
FDS4435BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, 0.02 ohm On Resistance, and 345pF Feedback Capacitance.
PMV250EPEAR
Nexperia
PMV250EPEAR by Nexperia is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.24 ohm Drain-Source On Resistance and 1.5A Drain Current, in a SMALL OUTLINE package with GULL WING terminals. AEC-Q101 and IEC-60134 compliant, it operates in ENHANCEMENT MODE for automotive and industrial electronics.
MMBF170LT3
MMBF170LT3 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 0.225W power dissipation, it offers reliable performance in small outline packages.
IRF6216TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 200 mJ; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 150 V;
SMMBFJ177LT1G
Small Signal Field-Effect Transistors; Maximum Drain-Source On Resistance: 300 ohm; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
ZXMN6A07FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G3;
ZVN2110A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;
NX7002AK,215
NXP Semiconductors' NX7002AK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.19A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm on resistance. With a max power dissipation of 1.33W, this small outline transistor has a peak reflow temperature of 260°C.
SI2308BDS-T1-GE3
SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.
BSS138WH6433XTMA1
Infineon Technologies
Infineon's BSS138WH6433XTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in various electronic devices.
2N7002W
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
PMV65XPER
PMV65XPER by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2.8A ID, 0.078 ohm RDS(on), and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
BSS84AKS,115
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 8.5 ohm; Minimum DS Breakdown Voltage: 50 V;
BSP171PH6327XTSA1
BSP171PH6327XTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 1.9A max drain current. Ideal for small outline applications, it features a built-in diode, 0.3 ohm RDS(on), and operates in enhancement mode up to 150°C.
FDC6305N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
FDV303N-F169
FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
DMC2400UV-7
DMC2400UV-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode. With a max drain current of 1.03A and low on-resistance of 0.7 ohm, it offers efficient performance at temperatures ranging from -55 to 150°C.
MMBF170LT1G
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
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BS107PSTZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JESD-30 Code: O-PBCY-W3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel;
BS107P
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Qualification: Not Qualified; Terminal Form: WIRE;
BS107PSTOB
BS107PSTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. With 200V DS Breakdown Voltage, it has 23 ohm Drain-Source On Resistance and 0.12A Drain Current. Its PLASTIC/EPOXY body, ENHANCEMENT MODE operation, and SILICON material make it ideal for various electronic circuits.
BS107PSTOA
BS107PSTOA by Zetex Plc is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 0.12A and 23 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. The transistor's PLASTIC/EPOXY body, RECTANGULAR shape, and WIRE terminals make it suitable for various electronic designs.
BS107A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Qualification: Not Qualified; JEDEC-95 Code: TO-92;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Power Dissipation Ambient: .83 W; Transistor Element Material: SILICON;
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; JESD-609 Code: e0; Maximum Power Dissipation Ambient: .6 W;
BS107ARL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Maximum Drain Current (Abs) (ID): .25 A;
BS107AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
BS107ARL1
BS107ARL1 by Onsemi is a N-CHANNEL FET with 200V DS breakdown voltage. It has 0.25A max drain current, 6.4 ohm RDS(on), and operates in enhancement mode for switching applications. The transistor comes in a cylindrical package with through-hole terminals, suitable for use at up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
BS107ARLRA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
BS107ARLRE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 200 V;
BS107ARLRM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6.4 ohm;
BS107
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 200 V; Maximum Drain Current (Abs) (ID): .13 A;
BS107ARLRP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Maximum Drain-Source On Resistance: 6.4 ohm; Terminal Position: BOTTOM;
BS107G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 200 V;
BS108
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Terminal Position: BOTTOM;
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