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BF495

Onsemi

BF495 by Onsemi

The Onsemi BF495 is a NPN BJT transistor with hFE of 35, fT of 120 MHz, and IC of 0.03 A. Ideal for amplifier applications due to its high transition frequency and low collector current. Its plastic/epoxy package with cylindrical shape makes it suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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J2 Sourcing AB

Sweden . 281,450 parts In-Stock

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Freddi Giovanni

Italy . 20,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8,760 parts In-Stock

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Digiode

USA . 4,262 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 3,000 parts In-Stock

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Anansix

USA . 1,957 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,539 parts In-Stock

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Vyrian

USA . 953 parts In-Stock

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953

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ECAB

Sweden . 290 parts In-Stock

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290

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Huijzer Components

Netherlands . 256 parts In-Stock

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GES GmbH

Germany . 120 parts In-Stock

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120

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Manotoh

Italy . 100 parts In-Stock

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100

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LittleDiode

UK . 98 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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ABC Electronics Ltd.

UK . 1 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,620 parts In-Stock

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$0.300

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$0.300

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Corohmni

South Africa . 205 parts In-Stock

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$1.961

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205

$1.961

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AZTECH Wire

Italy . 563 parts In-Stock

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$13.509

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563

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One Stop Electronics

USA . 822 parts In-Stock

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$26.050

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822

$26.050

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Semicontronic

India . 646 parts In-Stock

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$41.050

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$40.024

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$39.818

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646

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Infinite Electronics LLP (Excess)

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Kulean Microsystems

USA . 6,308 parts In-Stock

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TANS Electronics

Latvia . 4,799 parts In-Stock

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Argo Parts USA

USA . 4,036 parts In-Stock

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UNI Independent Distributors

Spain . 3,563 parts In-Stock

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SupplyDigital Components

Austria . 3,075 parts In-Stock

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Kepictronics

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Corphita

USA . 2,593 parts In-Stock

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Assy Fe

Spain . 1,071 parts In-Stock

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Problanco Electronics

Mexico . 1,045 parts In-Stock

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Continental Prestige Electronics

USA . 275 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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Overview

Discover the BF495 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With Onsemi's reputation for excellence in manufacturing, this NPN transistor offers customers reliability and performance. Its low DC current gain ensures optimal functionality, while its high operating temperature and collector-emitter voltage make it versatile for various uses. Upgrade your electronic projects with the BF495 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and is easier to work with in single transistor applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Allows for connection to other components without the need for additional connections, simplifying circuit layout.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, ensuring reliable performance even in demanding environments.

Maximum Collector-Base Capacitance: 1 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency response in amplifier circuits.

Maximum Collector-Emitter Voltage: 20 V

Handles relatively high voltages, making it suitable for various amplification applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance in transistor applications.

Maximum Collector Current (IC): 0.03 A

Supports moderate collector currents, suitable for low-power amplifier circuits and signal amplification.

Nominal Transition Frequency (fT): 120 MHz

High transition frequency ensures excellent high-frequency performance in amplifier circuits, especially for audio applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF495 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF495 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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