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BF493SRLRE

Onsemi

BF493SRLRE by Onsemi

BF493SRLRE by Onsemi is a PNP BJT with hFE of 40, VCEO of 350V, and IC of 0.5A. Ideal for applications requiring high voltage and current handling such as power supplies or amplifiers. The transistor's silicon element ensures reliable performance up to 150 °C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,640 parts In-Stock

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1,640

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Vyrian

USA . 807 parts In-Stock

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807

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Distributors (Availability)

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Native Components

USA . 588 parts In-Stock

1+ parts

$130.270

100+ parts

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$125.059

588

$130.270

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$125.059

Northwest PG Solutions

USA . 1,038 parts In-Stock

1+ parts

$143.297

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1,038

$143.297

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Problanco Electronics

Mexico . 5,829 parts In-Stock

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5,829

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TANS Electronics

Latvia . 5,805 parts In-Stock

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5,805

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Kulean Microsystems

USA . 5,265 parts In-Stock

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5,265

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SupplyDigital Components

Austria . 5,237 parts In-Stock

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5,237

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Corohmni

South Africa . 322 parts In-Stock

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322

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Corphita

USA . 246 parts In-Stock

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246

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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40

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Overview

Discover the power of the BF493SRLRE by Onsemi, a top-quality small signal bipolar junction transistor designed to meet your needs. With Onsemi's reputation for excellence in manufacturing, you can trust that this PNP transistor offers reliability and performance. Ideal for a range of applications, this product provides value and efficiency, making it a smart choice for your projects. Upgrade your electronics with the BF493SRLRE and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to damage, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuits, providing flexibility in design and compatibility with other components.

Configuration: SINGLE

Simplified design and ease of use in circuits requiring a single transistor.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments without risk of overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 350 V

Allows for handling of higher voltage levels, making the transistor suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 40

Ensures sufficient amplification of current in the circuit, providing reliable signal transmission.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, making it suitable for a variety of small signal applications.

Nominal Transition Frequency (fT): 50 MHz

Enables high-speed signal switching and amplification, ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF493SRLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF493SRLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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