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BF493SRLRP

Onsemi

BF493SRLRP by Onsemi

BF493SRLRP by Onsemi is a PNP BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 40. It is used in applications requiring high voltage switching or amplification due to its specifications like cylindrical package style, silicon transistor element material, and nominal transition frequency of 50MHz.

Median Price

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2

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1k+

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Vyrian

USA . 777 parts In-Stock

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Digiode

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Native Components

USA . 545 parts In-Stock

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Northwest PG Solutions

USA . 1,620 parts In-Stock

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SupplyDigital Components

Austria . 7,588 parts In-Stock

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TANS Electronics

Latvia . 5,415 parts In-Stock

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Problanco Electronics

Mexico . 928 parts In-Stock

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Corphita

USA . 912 parts In-Stock

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UHIMA Technologies

Türkiye . 742 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Experience the unparalleled quality and reliability of Onsemi with the BF493SRLRP Small Signal Bipolar Junction Transistor. This PNP transistor offers exceptional performance in a variety of applications, from amplifiers to switching circuits. With a high DC current gain and maximum operating temperature of 150 °C, this transistor delivers superior functionality and longevity. Trust Onsemi for top-notch components that provide unmatched value and efficiency for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with only one transistor in the package.

Package Shape: ROUND

Easy to mount and solder, suitable for various mounting configurations.

No. of Terminals: 3

Simple connection with only three terminals required.

Minimum DC Current Gain (hFE): 40

Ensures stable amplification of input signals with a minimum gain of 40.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 350 V

Handles high voltages without breakdown, suitable for high voltage circuits.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability for the transistor element.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5 A of current, suitable for medium power applications.

Terminal Finish: TIN LEAD

Easy to solder with tin lead terminal finish.

Nominal Transition Frequency (fT): 50 MHz

Offers good frequency response for signal amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF493SRLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF493SRLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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