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BF493SRLRA

Onsemi

BF493SRLRA by Onsemi

BF493SRLRA by Onsemi is a PNP BJT with hFE of 40, VCEO of 350V, and IC of 0.5A. Ideal for applications requiring high voltage switching in electronic circuits. Its silicon material and 50MHz fT make it suitable for various industrial uses.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,786 parts In-Stock

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Vyrian

USA . 77 parts In-Stock

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77

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Kulean Microsystems

USA . 6,526 parts In-Stock

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6,526

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SupplyDigital Components

Austria . 3,943 parts In-Stock

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Corphita

USA . 2,220 parts In-Stock

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Problanco Electronics

Mexico . 2,079 parts In-Stock

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TANS Electronics

Latvia . 1,043 parts In-Stock

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Northwest PG Solutions

USA . 663 parts In-Stock

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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Native Components

USA . 111 parts In-Stock

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Overview

Enhance your electronic projects with the BF493SRLRA by Onsemi, a top-tier manufacturer known for quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and versatility in applications such as amplifiers, switches, and oscillators. With a high DC current gain, low operating temperature, and durable package body material, this PNP transistor delivers superior functionality and longevity. Trust Onsemi to provide cutting-edge technology that exceeds expectations and unlocks endless possibilities for your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, providing versatility in usage.

Configuration: SINGLE

The single configuration simplifies circuit design and facilitates easy installation.

Package Shape: ROUND

The round shape allows for easy mounting and minimizes the risk of damage during installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, ensuring reliable performance.

No. of Terminals: 3

The limited number of terminals simplifies the connection process and reduces the risk of errors.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and ease of handling, making it suitable for small electronic devices.

Minimum DC Current Gain (hFE): 40

The high minimum DC current gain ensures consistent and reliable amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating ensures the transistor can handle higher voltages, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and durability, making them a preferred choice for many applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows the transistor to handle moderate current loads, making it suitable for various circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures reliable solder connections and prevents oxidation, extending the lifespan of the transistor.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and mounting, ensuring ease of installation and maintenance.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency indicates the transistor's ability to amplify high-frequency signals, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF493SRLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF493SRLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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