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BF494

Onsemi

BF494 by Onsemi

BF494 by Onsemi is a NPN BJT with hFE of 67. It has VCE of 20V and IC of 0.03A, making it ideal for low-power applications. The transistor's package style is cylindrical, with a max power dissipation of 0.35W, suitable for small signal amplification in various electronic circuits.

Median Price

$7.780

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 292 parts In-Stock

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$7.780

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ComSIT Distribution GmbH

Germany . 48,394 parts In-Stock

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Goldney Electronics S.L.

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Anansix

USA . 4,641 parts In-Stock

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Chip Stock

USA . 3,500 parts In-Stock

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Digiode

USA . 2,041 parts In-Stock

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Greenchips

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SIE Connect GmbH - GreenChips

Germany . 2,000 parts In-Stock

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Halfin

Belgium . 1,600 parts In-Stock

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Manotoh

Italy . 816 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 400 parts In-Stock

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J2 Sourcing AB

Sweden . 375 parts In-Stock

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Zilex Electronics Inc.

Canada . 336 parts In-Stock

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Vyrian

USA . 232 parts In-Stock

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LittleDiode

UK . 111 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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ECAB

Sweden . 65 parts In-Stock

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Nova Conductors

Japan . 46 parts In-Stock

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GES GmbH

Germany . 35 parts In-Stock

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35

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Holdelec - ElecDif-Pro

France . 20 parts In-Stock

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20

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ABC Electronics Ltd.

UK . 16 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 55 parts In-Stock

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$2.630

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$1.838

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$1.838

55

$2.630

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$1.838

$1.838

Corohmni

South Africa . 290 parts In-Stock

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$7.780

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290

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AZTECH Wire

Italy . 232 parts In-Stock

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$7.924

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One Stop Electronics

USA . 196 parts In-Stock

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$27.050

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QUARKTWIN TECHNOLOGY LTD

USA . 23,143 parts In-Stock

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Metaverse IC Inc.

Canada . 19,022 parts In-Stock

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Assy Fe

Spain . 5,692 parts In-Stock

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SupplyDigital Components

Austria . 5,038 parts In-Stock

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Kulean Microsystems

USA . 4,606 parts In-Stock

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TANS Electronics

Latvia . 4,106 parts In-Stock

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UNI Independent Distributors

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Argo Parts USA

USA . 2,257 parts In-Stock

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Corphita

USA . 2,135 parts In-Stock

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Continental Prestige Electronics

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Kepictronics

USA . 1,800 parts In-Stock

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Perfect Parts

USA . 1,344 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 600 parts In-Stock

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600

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Supply Digital

USA . 160 parts In-Stock

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Glotronic Ltd.

UK . 80 parts In-Stock

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80

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Problanco Electronics

Mexico . 63 parts In-Stock

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Overview

Elevate your electronic projects with the BF494 small signal bipolar junction transistor by Onsemi. Known for their superior quality and reliability, Onsemi transistors are trusted by professionals worldwide. The NPN configuration and low power dissipation make this transistor ideal for a wide range of applications, from amplifiers to oscillators. With a high DC current gain and maximum collector-emitter voltage of 20V, the BF494 offers exceptional performance and efficiency. Upgrade your designs today with the BF494 and experience the difference that Onsemi quality can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into a circuit and ensures compatibility with other components.

Configuration: SINGLE

The single configuration simplifies the design process and reduces the chances of errors during installation.

Package Shape: ROUND

The round shape of the package allows for easy mounting and installation in tight spaces.

Terminal Form: WIRE

The wire terminals provide a secure connection and are suitable for both manual and automated assembly processes.

No. of Terminals: 3

The three terminals offer flexibility in connecting to other components, making it versatile for different circuit designs.

Maximum Power Dissipation (Abs): 0.35 W

With a high power dissipation capability, this transistor can handle heat efficiently and operate reliably under various conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor and ease of handling during installation.

Minimum DC Current Gain (hFE): 67

The high current gain ensures amplified signals with minimal distortion, making this transistor ideal for audio and signal processing applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in extreme environments.

Maximum Collector-Emitter Voltage: 20 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages without breakdown, ensuring stability in the circuit.

Transistor Element Material: SILICON

The silicon material offers high conductivity and reliability, making it a popular choice for transistor applications.

Maximum Collector Current (IC): 0.03 A

The high collector current rating ensures the transistor can handle larger loads and deliver consistent performance.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures a secure connection between the transistor and other components.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to mount the transistor on a circuit board and ensures proper alignment for soldering.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures signal integrity in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF494 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

67

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

BF494 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5915-00-802-6669, 5915008026669, 5961-01-318-7298, 5961013187298

NIIN

008026669, 013187298

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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