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BF493SZL1

Onsemi

BF493SZL1 by Onsemi

BF493SZL1 by Onsemi is a PNP BJT with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150 °C. Ideal for amplifier applications, it offers a min hFE of 40, max VCE of 350V, and fT of 50MHz in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,042 parts In-Stock

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Vyrian

USA . 574 parts In-Stock

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Native Components

USA . 436 parts In-Stock

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$0.223

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$0.214

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Northwest PG Solutions

USA . 2,253 parts In-Stock

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$0.245

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$0.216

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Kulean Microsystems

USA . 5,403 parts In-Stock

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SupplyDigital Components

Austria . 2,014 parts In-Stock

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Corphita

USA . 912 parts In-Stock

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TANS Electronics

Latvia . 844 parts In-Stock

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Problanco Electronics

Mexico . 737 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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Corohmni

South Africa . 355 parts In-Stock

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Overview

Experience superior performance with the BF493SZL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their reliability and innovation, this PNP transistor is perfect for amplifier applications. With a maximum collector-emitter voltage of 350V and a nominal transition frequency of 50MHz, this transistor offers unparalleled value and efficiency. Upgrade your electronic projects with the BF493SZL1 and enjoy the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the transistor easier to use in projects.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable performance in amplification circuits.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various devices and circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy connections and soldering in circuit boards.

Maximum Power Dissipation: 0.625 W

With a high power dissipation capacity, this transistor can handle power efficiently without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers robust construction and enhances the overall durability of the transistor.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures proper amplification of input signals in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating allows the transistor to handle high voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material ensures good conductivity and reliability, making the transistor suitable for diverse applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in the circuit.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals provides good conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position simplifies the installation and connection process in circuit boards.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering and rework processes during manufacturing.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency enables fast switching and amplification of signals in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF493SZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF493SZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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