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BF495C

NXP Semiconductors

BF495C by NXP Semiconductors

The NXP Semiconductors BF495C is a NPN BJT transistor with 3 terminals. It has a min hFE of 67 and can handle a max IC of 0.03 A. Ideal for amplifier applications, it operates at up to 150°C with a fT of 120 MHz.

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J2 Sourcing AB

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Nova Conductors

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Huijzer Components

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LittleDiode

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Fibra_Brandt Electronic GMBH

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AZTECH Wire

Italy . 333 parts In-Stock

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One Stop Electronics

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Semicontronic

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Continental Prestige Electronics

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Overview

Experience unparalleled performance and reliability with the NXP Semiconductors BF495C small signal bipolar junction transistor. Manufactured by a trusted industry leader, this NPN transistor is perfect for amplifier applications, offering exceptional quality and durability. Whether you're a hobbyist or a professional, this product provides value and benefits that will exceed your expectations. Upgrade your circuits with the BF495C and unlock endless possibilities in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for portable or long-lasting applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and current gain characteristics.

Configuration: SINGLE

Single configuration transistors are easy to use in circuits without the complexity of multiple components, making them ideal for simpler amplifier designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and alignment in circuit boards, ensuring proper installation and connection.

No. of Terminals: 3

Having three terminals simplifies the connection process in circuits, reducing the chance of errors and making the transistor easy to integrate.

Terminal Position: BOTTOM

The bottom terminal position facilitates secure mounting and connection in circuit boards, ensuring stability and efficient operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF495C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

67

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF495C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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