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A5191HRTP

Onsemi

A5191HRTP by Onsemi

A5191HRTP by Onsemi is a modem IC with 28 terminals in a square chip carrier package. It operates b/w -40 to 85 °C, suitable for industrial use. With a data rate of 0.0012 Mbps and 3.3V supply voltage, it's ideal for telecom applications requiring low-speed communication.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,192 parts In-Stock

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Digiode

USA . 1,963 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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SupplyDigital Components

Austria . 6,771 parts In-Stock

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Kulean Microsystems

USA . 5,981 parts In-Stock

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TANS Electronics

Latvia . 4,968 parts In-Stock

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Problanco Electronics

Mexico . 4,856 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,664 parts In-Stock

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Lixinc

USA . 3,966 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,109 parts In-Stock

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Corphita

USA . 1,627 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Northwest PG Solutions

USA . 808 parts In-Stock

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Native Components

USA . 780 parts In-Stock

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Metaverse IC Inc.

Canada . 584 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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UHIMA Technologies

Türkiye . 303 parts In-Stock

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Kepictronics

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Overview

Unlock the power of seamless connectivity with the A5191HRTP modem by Onsemi. Crafted with precision and expertise, this modem exemplifies the quality that Onsemi is renowned for. Ideal for a wide range of applications, this modem offers unparalleled reliability and performance. Experience the value of staying connected with ease and efficiency. Upgrade to the A5191HRTP and revolutionize your communication experience today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the modem suitable for various environments.

Surface Mount: YES

Facilitates easy and quick installation of the modem onto circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this modem can withstand heat and function reliably in demanding conditions.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, making this modem efficient and reliable.

Data Rate: 0.0012 Mbps

The high data rate ensures fast and efficient communication, making this modem ideal for tasks that require quick data transfer.

Technical Specifications

Modems A5191HRTP attributes and parameters. Explore more Modems devices from Onsemi

Specs

Data Rate:

.0012 Mbps

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.4808 mm

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4808 mm

Trade Compliance

A5191HRTP Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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