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12197-508-XTP

Onsemi

12197-508-XTP by Onsemi

The Onsemi 12197-508-XTP modem features CMOS technology, operates at -40 to 85 °C, and has a data rate of 0.0012 Mbps. It is used in telecom applications for industrial purposes due to its 3.3V supply voltage requirement and quad terminal position.

Median Price

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Lifecycle Status

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Digiode

USA . 284 parts In-Stock

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Native Components

USA . 651 parts In-Stock

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SupplyDigital Components

Austria . 5,351 parts In-Stock

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TANS Electronics

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Problanco Electronics

Mexico . 3,678 parts In-Stock

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Corphita

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Kulean Microsystems

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Northwest PG Solutions

USA . 883 parts In-Stock

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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Overview

Looking for a reliable and high-quality modem for your telecommunications needs? Look no further than the 12197-508-XTP by Onsemi. Known for their exceptional manufacturing standards, Onsemi delivers cutting-edge technology in a compact chip carrier package, making it ideal for a wide range of applications. With a nominal supply voltage of 3.3V and a data rate of 0.0012 Mbps, this modem offers unparalleled performance and efficiency. Upgrade your systems today with the Onsemi 12197-508-XTP and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures durability and protection for the internal components of the modem.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation of the modem on circuit boards.

No. of Terminals: 28

Having 28 terminals provides a sufficient number of connection points for the modem to interface with other devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in demanding industrial environments.

Technology: CMOS

The CMOS technology used in the modem ensures low power consumption and efficient operation.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3 V makes the modem compatible with a wide range of power sources.

Data Rate: 0.0012 Mbps

Despite the seemingly low data rate, the modem's efficiency and reliability make it suitable for various communication applications.

Technical Specifications

Modems 12197-508-XTP attributes and parameters. Explore more Modems devices from Onsemi

Specs

Data Rate:

.0012 Mbps

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3/e4

Length:

11.4808 mm

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

MATTE TIN/NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Width:

11.4808 mm

Trade Compliance

12197-508-XTP Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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