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12197-503-XTP

Onsemi

12197-503-XTP by Onsemi

12197-503-XTP by Onsemi is a modem IC with 32 terminals in a square package. It operates b/w -40 to 85 °C, suitable for industrial use. With a data rate of 0.0012 Mbps and supply voltage of 3.3V, it's ideal for telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,545 parts In-Stock

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Vyrian

USA . 191 parts In-Stock

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191

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Distributors (Availability)

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Native Components

USA . 878 parts In-Stock

1+ parts

$0.110

100+ parts

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$0.106

878

$0.110

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$0.106

Northwest PG Solutions

USA . 2,247 parts In-Stock

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$0.121

100+ parts

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$0.107

2,247

$0.121

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$0.107

Problanco Electronics

Mexico . 8,076 parts In-Stock

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8,076

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TANS Electronics

Latvia . 6,027 parts In-Stock

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6,027

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SupplyDigital Components

Austria . 2,651 parts In-Stock

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2,651

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Kulean Microsystems

USA . 2,243 parts In-Stock

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Corphita

USA . 1,230 parts In-Stock

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UHIMA Technologies

Türkiye . 815 parts In-Stock

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815

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Corohmni

South Africa . 294 parts In-Stock

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Overview

Upgrade your communication systems with the reliable 12197-503-XTP modem by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in all their products. This modem is perfect for a wide range of applications, offering seamless connectivity and fast data transmission. Experience the value and benefits of this modem today and revolutionize the way you communicate. Trust Onsemi for all your modem needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the modem lightweight and durable, perfect for portable devices.

Surface Mount: YES

Surface mount design allows for easy installation and integration into circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this modem can withstand demanding industrial conditions without performance issues.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this modem energy-efficient and reliable.

Data Rate: 0.0012 Mbps

The high data rate of 0.0012 Mbps ensures fast and efficient data transfer, ideal for high-speed internet connections.

Technical Specifications

Modems 12197-503-XTP attributes and parameters. Explore more Modems devices from Onsemi

Specs

Data Rate:

.0012 Mbps

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e0

Length:

7 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Width:

7 mm

Trade Compliance

12197-503-XTP Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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