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2SC4109M

Onsemi

2SC4109M by Onsemi

The Onsemi 2SC4109M is a NPN power BJT with max. Vce of 400V and max. Ic of 16A. It has hFE of min. 20 and fT of 20MHz, ideal for switching applications in a single configuration with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 96 parts In-Stock

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Vyrian

USA . 5,695 parts In-Stock

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5,695

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Digiode

USA . 2,354 parts In-Stock

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2,354

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Distributors (Availability)

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Native Components

USA . 275 parts In-Stock

1+ parts

$1,751.760

100+ parts

$1,716.725

1k+ parts

$1,699.207

10k+ parts

$1,681.690

275

$1,751.760

$1,716.725

$1,699.207

$1,681.690

Northwest PG Solutions

USA . 2,376 parts In-Stock

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$1,926.936

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2,376

$1,926.936

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SupplyDigital Components

Austria . 8,109 parts In-Stock

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Problanco Electronics

Mexico . 4,784 parts In-Stock

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4,784

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TANS Electronics

Latvia . 2,735 parts In-Stock

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Kulean Microsystems

USA . 1,214 parts In-Stock

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Corphita

USA . 740 parts In-Stock

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740

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Corohmni

South Africa . 131 parts In-Stock

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UHIMA Technologies

Türkiye . 102 parts In-Stock

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Overview

Unlock the power of the 2SC4109M by Onsemi, a top-of-the-line Power Bipolar Junction Transistor that boasts unparalleled quality and reliability. Manufactured by industry leader Onsemi, this NPN transistor is ideal for switching applications and offers a maximum collector-emitter voltage of 400V and a maximum collector current of 16A. With a minimum DC current gain of 20 and a nominal transition frequency of 20MHz, this transistor delivers exceptional performance in a variety of electronic circuits. Trust Onsemi to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are widely used in electronic circuits for amplification and switching purposes, making this transistor versatile and compatible with various applications.

Configuration: SINGLE

Simplifies the circuit design by having only one transistor in the package, reducing complexity and potential points of failure.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control high-power devices with minimal energy loss.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltage levels, making it suitable for power applications where voltage spikes may occur.

Maximum Collector Current (IC): 16 A

Capable of handling high current loads, making it ideal for power applications that require a high level of current.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4109M attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4109M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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