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2SC4027T-TL-E

Onsemi

2SC4027T-TL-E by Onsemi

The Onsemi 2SC4027T-TL-E is an NPN power BJT with a max VCEsat of 0.45V, ideal for switching applications. With a max IC of 1.5A and Ptot of 15W, it operates at up to 150°C. This transistor has a hFE of 200 and fT of 120MHz, making it suitable for high-frequency circuits in small outline packages.

Median Price

$0.847

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18,200 parts In-Stock

1+ parts

$0.445

100+ parts

$0.419

1k+ parts

$0.379

10k+ parts

$0.379

18,200

$0.445

$0.419

$0.379

$0.379

Arrow

USA . 2,100 parts In-Stock

1+ parts

$1.393

100+ parts

$0.701

1k+ parts

$0.473

10k+ parts

-

2,100

$1.393

$0.701

$0.473

-

Farnell

UK . 1,677 parts In-Stock

1+ parts

$1.500

100+ parts

$0.637

1k+ parts

$0.480

10k+ parts

$0.372

1,677

$1.500

$0.637

$0.480

$0.372

Mouser Electronics

USA . 165 parts In-Stock

1+ parts

$1.840

100+ parts

$0.784

1k+ parts

$0.511

10k+ parts

-

165

$1.840

$0.784

$0.511

-

DigiKey

USA . 7,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.558

10k+ parts

$0.512

7,221

-

-

$0.558

$0.512

Verical

USA . 2,100 parts In-Stock

1+ parts

-

100+ parts

$0.701

1k+ parts

$0.473

10k+ parts

-

2,100

-

$0.701

$0.473

-

Chip1Stop

Japan . 2,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.468

10k+ parts

$0.394

2,100

-

-

$0.468

$0.394

Element14

Singapore . 1,957 parts In-Stock

1+ parts

-

100+ parts

$0.993

1k+ parts

$0.861

10k+ parts

$0.794

1,957

-

$0.993

$0.861

$0.794

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,320 parts In-Stock

1+ parts

$0.423

100+ parts

-

1k+ parts

-

10k+ parts

-

1,320

$0.423

-

-

-

Nova Conductors

Japan . 85 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

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85

$0.570

-

-

-

Chip Stock

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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20,000

-

-

-

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Vyrian

USA . 11,172 parts In-Stock

1+ parts

-

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-

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11,172

-

-

-

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Bristol Electronics

USA . 975 parts In-Stock

1+ parts

-

100+ parts

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975

-

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Flip Electronics

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,004 parts In-Stock

1+ parts

$0.400

100+ parts

-

1k+ parts

-

10k+ parts

-

1,004

$0.400

-

-

-

Corohmni

South Africa . 332 parts In-Stock

1+ parts

$0.445

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$0.445

-

-

-

Argo Parts USA

USA . 2,978 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

$0.553

2,978

$0.570

-

-

$0.553

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.570

-

-

-

Component Stockers USA

USA . 68,549 parts In-Stock

1+ parts

$0.960

100+ parts

$0.640

1k+ parts

$0.540

10k+ parts

$0.380

68,549

$0.960

$0.640

$0.540

$0.380

Perfect Parts

USA . 28,271 parts In-Stock

1+ parts

-

100+ parts

-

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28,271

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 18,410 parts In-Stock

1+ parts

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18,410

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

-

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Problanco Electronics

Mexico . 7,602 parts In-Stock

1+ parts

-

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7,602

-

-

-

-

Kulean Microsystems

USA . 7,536 parts In-Stock

1+ parts

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7,536

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Microchip USA

USA . 5,403 parts In-Stock

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5,403

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TANS Electronics

Latvia . 3,298 parts In-Stock

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3,298

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SupplyDigital Components

Austria . 2,414 parts In-Stock

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2,414

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-

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Metaverse IC Inc.

Canada . 1,640 parts In-Stock

1+ parts

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1,640

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Assy Fe

Spain . 1,640 parts In-Stock

1+ parts

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1,640

-

-

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Continental Prestige Electronics

USA . 639 parts In-Stock

1+ parts

-

100+ parts

$0.563

1k+ parts

$0.386

10k+ parts

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639

-

$0.563

$0.386

-

UHIMA Technologies

Türkiye . 502 parts In-Stock

1+ parts

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502

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Kepictronics

USA . 240 parts In-Stock

1+ parts

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240

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-

Overview

Unleash the power of innovation with the 2SC4027T-TL-E by Onsemi. Designed for high-performance applications, this Power Bipolar Junction Transistor (BJT) is a game-changer in the world of switching technology. With a maximum VCEsat of 0.45V and a minimum DC current gain of 200, this NPN transistor offers superior efficiency and reliability. Whether you're looking to optimize your power supply design or enhance your motor control system, the 2SC4027T-TL-E delivers unmatched performance and versatility. Trust Onsemi's legacy of quality and expertise to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes this product lightweight and durable.

Polarity or Channel Type: NPN

The NPN configuration of this transistor allows for efficient switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easy to integrate into various electronic devices.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor provides reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable, this transistor is easy to install and saves space on the PCB.

Maximum VCEsat: 0.45 V

The low maximum VCEsat value ensures efficient power usage and reduced heat dissipation.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor for easy placement on the PCB.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and ensures secure connections.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to connect and use in circuits.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation of 15 W allows this transistor to handle high-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for dense circuit designs.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature of 150°C ensures reliable performance in various environments.

Maximum Collector-Base Capacitance: 12 pF

The low collector-base capacitance minimizes signal distortion and ensures accurate switching.

Maximum Collector-Emitter Voltage: 160 V

The high maximum collector-emitter voltage makes this transistor suitable for high voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability.

Maximum Collector Current (IC): 1.5 A

The high maximum collector current allows for handling high current loads in circuits.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and corrosion resistance.

Terminal Position: SINGLE

With a single terminal position, this transistor is easy to handle and connect in circuits.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and provides a clear connection point.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering of the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper soldering and durability of the transistor.

Nominal Transition Frequency (fT): 120 MHz

The high nominal transition frequency allows for fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4027T-TL-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.45 V

Trade Compliance

2SC4027T-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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