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2SC4532

Toshiba

2SC4532 by Toshiba

Toshiba's 2SC4532 is a NPN BJT transistor with max VCEsat of 5V, IC of 10A, and Pd of 200W. Ideal for switching applications due to its single configuration and high collector-emitter voltage of 600V. With a transition frequency of 3MHz, it offers efficient performance in power electronics.

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Overview

Experience unparalleled quality and reliability with the Toshiba 2SC4532 Power Bipolar Junction Transistor. As a leading manufacturer in the industry, Toshiba offers top-notch products that excel in performance and durability. Ideal for switching applications, this NPN transistor provides a maximum VCEsat of 5V and a maximum power dissipation of 200W, ensuring optimal functionality. Trust in Toshiba to deliver exceptional products like the 2SC4532 that offer unbeatable value and benefits, making it the perfect choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for different applications.

Configuration: SINGLE

Simplified circuit design and easy integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Maximum VCEsat: 5 V

Low VCEsat minimizes power loss in the transistor, improving efficiency.

Package Shape: RECTANGULAR

Space-efficient design for compact PCB layouts.

Terminal Form: THROUGH-HOLE

Easy soldering and secure connection to the PCB, suitable for through-hole mounting.

Maximum Power Dissipation Ambient: 200 W

High power dissipation capability allows the transistor to handle high current loads without overheating.

Minimum DC Current Gain (hFE): 10

Sufficient current gain for amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

Wide temperature range for reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High breakdown voltage provides protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon transistors offer better performance and reliability compared to other materials.

Maximum Collector Current (IC): 10 A

High collector current rating for handling heavy loads in power circuits.

Maximum Turn Off Time (toff): 3200 ns

Fast turn-off time ensures quick response in switching applications.

Terminal Position: SINGLE

Simplified wiring and connection setup for ease of use.

Case Connection: COLLECTOR

Improved thermal management and heat dissipation through the collector terminal.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency for fast switching speeds and optimal performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4532 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

200 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3200 ns

Maximum VCEsat:

5 V

Trade Compliance

2SC4532 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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