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2SC4027S-H

Onsemi

2SC4027S-H by Onsemi

The Onsemi 2SC4027S-H is a NPN BJT transistor with max VCEsat of 0.45V, hFE of 140, and IC of 1.5A. Ideal for switching applications due to its high transition frequency of 120MHz and low collector-emitter voltage of 160V. Its package style is in-line with through-hole terminals, making it suitable for power dissipation up to 15W in various electronic circuits.

Median Price

$0.257

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,931 parts In-Stock

1+ parts

$0.257

100+ parts

$0.242

1k+ parts

$0.218

10k+ parts

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4,931

$0.257

$0.242

$0.218

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Distributors (In-Stock)

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Digiode

USA . 311 parts In-Stock

1+ parts

$0.244

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311

$0.244

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Vyrian

USA . 840 parts In-Stock

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$0.257

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840

$0.257

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Chip Stock

USA . 24,700 parts In-Stock

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24,700

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DigiKey Marketplace

USA . 18,000 parts In-Stock

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18,000

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Flip Electronics

USA . 5,600 parts In-Stock

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5,600

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Distributors (Availability)

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Corphita

USA . 1,985 parts In-Stock

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$0.231

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1,985

$0.231

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Corohmni

South Africa . 52 parts In-Stock

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$0.257

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52

$0.257

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Native Components

USA . 78 parts In-Stock

1+ parts

$0.906

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78

$0.906

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Northwest PG Solutions

USA . 12 parts In-Stock

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$0.997

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12

$0.997

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Microchip USA

USA . 465 parts In-Stock

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$1.630

100+ parts

$1.620

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$1.610

10k+ parts

$1.610

465

$1.630

$1.620

$1.610

$1.610

QUARKTWIN TECHNOLOGY LTD

USA . 17,168 parts In-Stock

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TANS Electronics

Latvia . 6,710 parts In-Stock

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Kulean Microsystems

USA . 5,417 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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SupplyDigital Components

Austria . 3,340 parts In-Stock

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3,340

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Problanco Electronics

Mexico . 2,675 parts In-Stock

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2,675

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Metaverse IC Inc.

Canada . 797 parts In-Stock

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Kepictronics

USA . 697 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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107

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Overview

Upgrade your power management systems with the 2SC4027S-H by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Power Bipolar Junction Transistors (BJT) that offer superior performance and reliability. Ideal for switching applications, this NPN transistor boasts a low VCEsat of 0.45V and a maximum collector current of 1.5A, making it a versatile choice for a variety of projects. With a package style of IN-LINE and a package body material of PLASTIC/EPOXY, this transistor is designed for easy installation and long-lasting durability. Trust Onsemi's expertise and experience in power management to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protects the transistor from external environmental factors, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile in different circuit configurations.

Maximum VCEsat: 0.45 V

Low VCEsat value indicates minimal saturation voltage drop, leading to high efficiency and reduced power loss in switching applications.

Minimum DC Current Gain (hFE): 140

A high minimum DC current gain ensures stable and consistent amplification of the input signal, making this transistor reliable for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated thermal conditions, increasing its reliability and longevity in diverse environments.

Nominal Transition Frequency (fT): 120 MHz

The high transition frequency indicates fast switching speeds and high-frequency performance, making this transistor suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4027S-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.45 V

Trade Compliance

2SC4027S-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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