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2SC4027S-TL-H

Onsemi

2SC4027S-TL-H by Onsemi

The Onsemi 2SC4027S-TL-H is a NPN BJT transistor with max VCEsat of 0.45V, hFE of 140, and IC of 1.5A. Ideal for switching applications in small outline packages with max power dissipation of 15W. Suitable for surface mount designs requiring high-speed performance up to 120MHz transition frequency.

Median Price

$0.464

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,600 parts In-Stock

1+ parts

$0.467

100+ parts

-

1k+ parts

-

10k+ parts

$0.407

5,600

$0.467

-

-

$0.407

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$1.423

100+ parts

$1.295

1k+ parts

$1.167

10k+ parts

-

200

$1.423

$1.295

$1.167

-

Mouser Electronics

USA . 664 parts In-Stock

1+ parts

$1.550

100+ parts

$0.649

1k+ parts

$0.549

10k+ parts

$0.418

664

$1.550

$0.649

$0.549

$0.418

Verical

USA . 13,300 parts In-Stock

1+ parts

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$0.341

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13,300

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$0.341

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Flip Electronics (Authorized)

USA . 2,100 parts In-Stock

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2,100

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Rochester

USA . 1,373 parts In-Stock

1+ parts

-

100+ parts

$0.461

1k+ parts

$0.382

10k+ parts

$0.341

1,373

-

$0.461

$0.382

$0.341

DigiKey

USA . 320 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.457

10k+ parts

$0.418

320

-

-

$0.457

$0.418

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,387 parts In-Stock

1+ parts

$0.329

100+ parts

-

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2,387

$0.329

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Digiode

USA . 1,029 parts In-Stock

1+ parts

$0.334

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1,029

$0.334

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Chip Stock

USA . 21,308 parts In-Stock

1+ parts

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21,308

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Flip Electronics

USA . 15,400 parts In-Stock

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15,400

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Distributors (Availability)

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Corphita

USA . 1,309 parts In-Stock

1+ parts

$0.317

100+ parts

-

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1,309

$0.317

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Component Stockers USA

USA . 5,576 parts In-Stock

1+ parts

$0.360

100+ parts

$0.340

1k+ parts

$0.310

10k+ parts

-

5,576

$0.360

$0.340

$0.310

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.423

100+ parts

$1.295

1k+ parts

$1.167

10k+ parts

-

200

$1.423

$1.295

$1.167

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Corohmni

South Africa . 254 parts In-Stock

1+ parts

$1.727

100+ parts

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254

$1.727

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Native Components

USA . 471 parts In-Stock

1+ parts

$9.450

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471

$9.450

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Northwest PG Solutions

USA . 1,653 parts In-Stock

1+ parts

$10.395

100+ parts

$9.355

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1,653

$10.395

$9.355

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QUARKTWIN TECHNOLOGY LTD

USA . 14,800 parts In-Stock

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14,800

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 8,410 parts In-Stock

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8,410

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Kulean Microsystems

USA . 8,039 parts In-Stock

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8,039

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Problanco Electronics

Mexico . 7,578 parts In-Stock

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7,578

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SupplyDigital Components

Austria . 7,467 parts In-Stock

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7,467

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Continental Prestige Electronics

USA . 6,600 parts In-Stock

1+ parts

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100+ parts

$0.420

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6,600

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$0.420

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Kepictronics

USA . 1,767 parts In-Stock

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1,767

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TANS Electronics

Latvia . 1,303 parts In-Stock

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Metaverse IC Inc.

Canada . 435 parts In-Stock

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435

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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383

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Overview

Power up your projects with the 2SC4027S-TL-H by Onsemi! This high-quality NPN Power BJT transistor is perfect for switching applications, offering a maximum VCEsat of just 0.45V and a minimum DC current gain of 140. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 160V, this transistor provides reliable performance in a compact small outline package. Trust Onsemi's reputation for excellence in semiconductor manufacturing and unlock the potential of your designs with the 2SC4027S-TL-H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Common type of bipolar junction transistor which allows for easier integration into circuits and compatibility with other components.

Configuration: SINGLE

Simplified design for easier implementation and troubleshooting in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards, saving space and improving overall design.

Maximum VCEsat: 0.45 V

Low saturation voltage results in minimal power loss and improved efficiency.

Package Shape: RECTANGULAR

Standard shape for easy handling and integration into circuits.

Terminal Form: GULL WING

Provides strong and reliable connections during soldering process.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows for handling of demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size for space-saving in circuit board layouts.

Minimum DC Current Gain (hFE): 140

High current gain ensures efficient amplification and switching functionality.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments.

Maximum Collector-Base Capacitance: 12 pF

Low capacitance for faster switching speeds and reduced signal distortion.

Maximum Collector-Emitter Voltage: 160 V

High voltage rating allows for handling of higher voltage applications.

Transistor Element Material: SILICON

Common and reliable material for semiconductor devices.

Maximum Collector Current (IC): 1.5 A

Sufficient current handling capacity for various switching applications.

Terminal Finish: TIN BISMUTH

Durable finish for long-lasting solder connections.

Terminal Position: SINGLE

Simplified terminal layout for easier circuit board integration.

Case Connection: COLLECTOR

Specific connection for improved performance in switching applications.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient reflow time for proper soldering and connection reliability.

Peak Reflow Temperature °C: 260

High reflow temperature capability for durable solder connections.

Nominal Transition Frequency (fT): 120 MHz

High frequency capability for fast switching and signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4027S-TL-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.45 V

Trade Compliance

2SC4027S-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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