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2SC4110

Onsemi

2SC4110 by Onsemi

The Onsemi 2SC4110 is a NPN Power BJT with max. Vce of 400V and Ic of 25A. It has hFE of min. 10 and fT of 20MHz, ideal for switching applications in various industries due to its single configuration and through-hole terminal form.

Median Price

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Lifecycle Status

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Digiode

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Native Components

USA . 233 parts In-Stock

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Northwest PG Solutions

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TANS Electronics

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SupplyDigital Components

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Problanco Electronics

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Glotronic Ltd.

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Overview

Unleash the power of innovation with the Onsemi 2SC4110 Power Bipolar Junction Transistor. Known for its high-quality manufacturing and top-notch performance, this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 25A, the 2SC4110 offers unparalleled reliability and efficiency. Whether you're designing industrial equipment or automotive electronics, this transistor is a game-changer in the world of power electronics. Upgrade your projects today with the Onsemi 2SC4110 and experience the difference in performance and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, making the product reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easy to use and implement in circuits.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast response and efficient operation.

Package Shape: RECTANGULAR

Allows for easy mounting and space-saving design in electronic circuits.

Terminal Form: THROUGH-HOLE

Provides secure connections and easy soldering in circuit boards.

No. of Terminals: 3

Simple layout with 3 terminals for easy connection and integration in circuits.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting in electronic devices or equipment.

Minimum DC Current Gain (hFE): 10

Ensures consistent and stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltages in switching applications without breakdown.

Transistor Element Material: SILICON

Offers high reliability, low leakage, and good thermal performance for long-term operation.

Maximum Collector Current (IC): 25 A

Capable of handling high currents for power switching applications.

Terminal Position: SINGLE

Simplified terminal layout for easy connectivity and circuit design.

Nominal Transition Frequency (fT): 20 MHz

Operates at high frequencies for fast switching speeds in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4110 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4110 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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