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2SC4518A

Sanken Electric

2SC4518A by Sanken Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 6 MHz; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 5 A;

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2

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Vyrian

USA . 242 parts In-Stock

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242

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Aztec Data Supply Inc.

USA . 3,639 parts In-Stock

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3,639

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AZTECH Wire

Italy . 622 parts In-Stock

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$5.922

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622

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Continental Prestige Electronics

USA . 4,688 parts In-Stock

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4,688

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Glotronic Ltd.

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2,900

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Argo Parts USA

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Assy Fe

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1,000

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Aranea Global

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500

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC4518A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Sanken Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

550 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4518A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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