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BZV90C11TRL13

NXP Semiconductors

BZV90C11TRL13 by NXP Semiconductors

BZV90C11TRL13 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 11 V and max power dissipation of 1.3 W. It features a compact surface mount design with gull-wing terminals, ideal for voltage regulation in electronic circuits. Its low temp coefficient of 9 mV/°C ensures stable performance across varying temperatures.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,679 parts In-Stock

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Vyrian

USA . 2,389 parts In-Stock

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Anansix

USA . 1,487 parts In-Stock

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One Stop Electronics

USA . 1,109 parts In-Stock

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$1.010

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Native Components

USA . 117 parts In-Stock

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$22.649

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Northwest PG Solutions

USA . 2,191 parts In-Stock

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$24.914

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$22.423

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2,191

$24.914

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UNI Independent Distributors

Spain . 1,519 parts In-Stock

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Corphita

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Overview

Unlock the power of reliability with the BZV90C11TRL13 Zener Diode from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP ensures this diode excels in voltage regulation and circuit protection across various applications, from consumer electronics to industrial systems. Experience enhanced performance, superior thermal stability, and compact design that not only saves space but also elevates your project's efficiency and durability. Choose the BZV90C11TRL13 for unmatched value in your electronic designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent mechanical protection and reliability, making the Zener diode suitable for various applications.

Config: SINGLE

The single configuration ensures simplicity and ease of integration into circuits, reducing design complexity.

Working Test Current: 5 mA

A relatively low working test current allows for lower power consumption in circuits while ensuring adequate performance.

Surface Mount: YES

Surface mount capability facilitates automated assembly processes and saves space on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape enhances layout flexibility and makes it easier to fit into compact designs.

No. of Terminals: 4

With four terminals, this Zener diode can provide additional connectivity options for improved circuit configuration.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space requirements and enables high-density circuit designs.

Terminal Finish: TIN

Tin finishing on terminals ensures good solderability and long-term reliability in circuit connections.

Terminal Position: DUAL

The dual terminal position allows for more versatile mounting options in various circuit layouts.

Case Connection: CATHODE

A cathode connection standardizes the orientation and simplifies the integration into existing circuits.

Maximum Power Dissipation: 1.3 W

With a maximum power dissipation of 1.3W, this diode can handle significant energy without overheating, making it reliable in high-load situations.

Diode Type: ZENER DIODE

As a Zener diode, it provides precise voltage regulation, making it ideal for voltage reference and protection applications.

Maximum Voltage Temperature Coefficient: 9mv/°C

A low voltage temperature coefficient ensures stable performance across varying temperatures, enhancing the diode's reliability.

Nominal Reference Voltage: 11 V

This nominal reference voltage is suitable for many applications, facilitating precise voltage clamping and regulation.

Technology: ZENER

The Zener technology allows for reversed voltage operation, enabling effective voltage regulation and protection.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and provides good soldering characteristics.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures proper functioning within the intended applications, providing predictability in performance.

Diode Element Material: SILICON

Silicon as a base material offers high efficiency and durability, making the diode suitable for a wide range of electronic applications.

Technical Specifications

Zener Diodes BZV90C11TRL13 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

11 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

9 mV/Cel

Working Test Current:

5 mA

Trade Compliance

BZV90C11TRL13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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