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BZV90C10

NXP Semiconductors

BZV90C10 by NXP Semiconductors

BZV90C10 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 10 V and max power dissipation of 1.5 W. It features a max operating temp of 150 °C and low dynamic impedance of 20 Ω, ideal for voltage regulation in compact electronics. Its surface mount design ensures efficient integration into various applications.

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Northwest PG Solutions

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Overview

Elevate your designs with the BZV90C10 Zener Diode from NXP Semiconductors, a trusted leader in innovative technology. Crafted for reliability and performance, this diode ensures stable voltage regulation, making it perfect for power management and signal conditioning applications. Its compact surface mount design simplifies integration, delivering exceptional value and efficiency. Choose NXP for quality you can trust—engineered to enhance your devices' durability and functionality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection against environmental factors, making the diode reliable in various applications.

Configuration: SINGLE

A single configuration simplifies integration into circuits, allowing for easier design and less space consumption.

Working Test Current: 5 mA

Operating at a modest test current ensures efficient performance while reducing the risk of overheating or damage.

Surface Mount: YES

The surface mount capability facilitates compact PCB designs and automated assembly processes, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of board space and positioning, optimizing layout in electronic devices.

Number of Terminals: 4

Four terminals provide stable connections and improve the reliability of signal transmission within the circuit.

Package Style (Meter): SMALL OUTLINE

A small outline package offers a compact solution that contributes to smaller device footprints, crucial in modern electronics.

Maximum Voltage Tolerance: 5 %

A 5% tolerance provides accuracy in voltage regulation, ensuring the diode effectively manages voltage fluctuations in circuits.

Maximum Operating Temperature: 150 °C

High thermal resilience ensures reliability and performance in demanding environments where heat is a critical factor.

Maximum Dynamic Impedance: 20 ohm

Low dynamic impedance helps in maintaining stable voltage regulation under varying load conditions, boosting circuit performance.

Terminal Finish: TIN

Tin plating enhances solderability and corrosion resistance, ensuring durable connections and longevity of the device.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in mounting options, allowing for versatile application in various designs.

Case Connection: CATHODE

Cathode connection design simplifies circuit integration and aligns with standard Zener diode implementations.

Maximum Power Dissipation: 1.5 W

A maximum power dissipation of 1.5 W allows the diode to handle significant power levels without failure, suitable for robust applications.

Maximum Time At Peak Reflow Temperature: 30 s

A reflow time of 30 seconds ensures compatibility with modern soldering processes without compromising the diode's integrity.

Peak Reflow Temperature: 260 °C

The ability to withstand high peak temperatures is critical for soldering processes, preventing damage during assembly.

Diode Type: ZENER DIODE

As a Zener diode, this component is ideal for voltage regulation applications, providing reliable performance in voltage clamping.

Maximum Voltage Temperature Coefficient: 8 mV/°C

A low temperature coefficient indicates excellent voltage stability with temperature changes, enhancing reliability in thermal environments.

Nominal Reference Voltage: 10 V

A nominal reference voltage of 10 V makes this diode suitable for applications requiring precise voltage regulation.

Technology: ZENER

The Zener technology ensures proper voltage clamping and regulation in both power supply and protection circuitry.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve mechanical strength of the connections, enhancing reliability.

Polarity: UNIDIRECTIONAL

Unidirectional characteristics ensure proper alignment and functionality within circuits designed for specific current flow.

Diode Element Material: SILICON

Silicon is well-known for its excellent electrical properties, providing high efficiency and reliability in Zener diodes.

Technical Specifications

Zener Diodes BZV90C10 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

20 ohm

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

8 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV90C10 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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