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BZV90-C11135

NXP Semiconductors

BZV90-C11135 by NXP Semiconductors

BZV90-C11135 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 11 V and max power dissipation of 1.5 W. It features a small outline package, ideal for surface mount applications. With a max operating temp of 150 °C, it ensures reliability in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,735 parts In-Stock

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Anansix

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One Stop Electronics

USA . 1,413 parts In-Stock

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Corphita

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UNI Independent Distributors

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Native Components

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Northwest PG Solutions

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Overview

Unlock precision and reliability with the BZV90-C11135 Zener Diode from NXP Semiconductors. Renowned for their quality and innovation, NXP ensures this diode delivers exceptional voltage regulation and thermal performance, making it ideal for a variety of applications in power management and signal conditioning. Experience enhanced circuit stability and efficiency, knowing you’re backed by a trusted leader in semiconductor technology. Elevate your designs effortlessly!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making this Zener diode suitable for a variety of applications.

Config: SINGLE

A single configuration makes this diode compact, allowing it to fit into space-constrained designs without sacrificing performance.

Working Test Current: 5 mA

Operating at a test current of 5 mA ensures that the diode can effectively regulate voltage in low-power applications.

Surface Mount: YES

Surface mount capability allows for easier integration into modern printed circuit boards, increasing production efficiency.

Maximum Reverse Current: 0.1 µA

With a low maximum reverse current of 0.1 µA, this diode minimizes power loss and enhances the efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape is ideal for high-density applications, making the diode easier to place in compact layouts.

No. of Terminals: 4

Having four terminals allows for easier connections and more versatile configurations in both prototyping and production.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and lowers costs by enabling higher component density.

Maximum Voltage Tolerance: 5 %

A maximum voltage tolerance of 5% ensures reliability in voltage regulation applications, maintaining consistent performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature rating, this Zener diode can be used in environments where other components might fail, expanding its application range.

Terminal Finish: TIN

TIN terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections post-assembly.

Terminal Position: DUAL

A dual terminal position facilitates various circuit designs, offering flexibility in PCB layout.

Case Connection: CATHODE

The cathode connection is standard for Zener applications, simplifying integration into existing designs.

Maximum Power Dissipation: 1.5 W

With a maximum power dissipation of 1.5 W, this diode can handle substantial power loads, making it suitable for more demanding applications.

Diode Type: ZENER DIODE

As a Zener diode, it is specifically designed for voltage regulation, providing stable reference voltages for various circuits.

Maximum Voltage Temperature Coefficient: 9 mV/°C

A low voltage temperature coefficient allows for minimal drift in voltage regulation across temperature variations, ensuring reliability in diverse conditions.

Nominal Reference Voltage: 11 V

A nominal reference voltage of 11 V offers a reliable voltage standard, enabling precise control in electronic circuits.

Technology: ZENER

Utilizing Zener technology provides effective voltage clamping, protecting downstream components from voltage spikes.

Terminal Form: GULL WING

Gull-wing terminals simplify PCB assembly with automatic placement techniques and lead attachment, thereby improving manufacturing efficiency.

Polarity: UNIDIRECTIONAL

This unidirectional configuration ensures straightforward integration into designs, preventing connection errors.

Diode Element Material: SILICON

Silicon diode elements offer excellent electrical characteristics and stability, making this diode a reliable choice for various applications.

Technical Specifications

Zener Diodes BZV90-C11135 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

11 V

Maximum Reverse Current:

.1 uA

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

9 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV90-C11135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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