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BZV90C10TRL

NXP Semiconductors

BZV90C10TRL by NXP Semiconductors

BZV90C10TRL from NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 10 V and max power dissipation of 1.3 W. It features a compact surface mount design with 4 terminals, ideal for voltage regulation in electronic circuits. Its low temp coefficient of 8 mV/°C ensures stable performance across varying conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,540 parts In-Stock

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4,540

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Anansix

USA . 1,830 parts In-Stock

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1,830

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Vyrian

USA . 1,793 parts In-Stock

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One Stop Electronics

USA . 1,354 parts In-Stock

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$0.010

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$0.010

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Native Components

USA . 476 parts In-Stock

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$56.789

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$54.518

476

$56.789

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$54.518

Northwest PG Solutions

USA . 159 parts In-Stock

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$62.468

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159

$62.468

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Corphita

USA . 1,769 parts In-Stock

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1,769

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UNI Independent Distributors

Spain . 995 parts In-Stock

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995

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Overview

Elevate your designs with the BZV90C10TRL Zener diode from NXP Semiconductors, a leader in innovative solutions. Engineered for reliability and efficiency, this compact surface mount device ensures stable voltage regulation in various applications—from power supplies to signal clamping. With NXP’s commitment to quality, you gain not only superior performance but also peace of mind, knowing you're backed by a trusted name in semiconductor technology. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures a lightweight and durable product, enhancing its performance in various applications.

Config: SINGLE

A single configuration makes this Zener diode ideal for simple applications where only one Zener function is required.

Working Test Current: 5 mA

This low working test current allows for efficient power usage, making the diode suitable for battery-powered applications.

Surface Mount: YES

Surface mount capability enables compact electronic designs and makes it easy to integrate into modern circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCB layouts, facilitating easier assembly and higher component density.

No. of Terminals: 4

Four terminals provide robust connections, ensuring stable performance in electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for reduced footprint on the board, making it suitable for space-constrained designs.

Terminal Finish: TIN

Tin terminal finish ensures excellent solderability and corrosion resistance, leading to reliable long-term connections.

Terminal Position: DUAL

Dual terminal positioning enhances versatility in circuit design and can improve thermal management.

Case Connection: CATHODE

The cathode connection ensures proper orientation and functionality, making integration into circuits straightforward.

Maximum Power Dissipation: 1.3 W

A high maximum power dissipation rating allows the diode to handle a wide range of applications without overheating.

Diode Type: ZENER DIODE

As a Zener diode, this component is excellent for voltage regulation and voltage clamping applications.

Maximum Voltage Temperature Coefficient: 8mv/°C

With a low voltage temperature coefficient, this diode maintains stable performance across a range of temperatures.

Nominal Reference Voltage: 10 V

A nominal reference voltage of 10 V makes it ideal for regulating circuits that require a consistent voltage reference.

Technology: ZENER

The Zener technology employed in this diode is well-established, known for its reliability and effectiveness in voltage regulation.

Terminal Form: GULL WING

Gull wing terminal form offers enhanced soldering capability, making assembly easier and more reliable.

Polarity: UNIDIRECTIONAL

The unidirectional feature simplifies circuit design, as it allows current flow in one direction, preventing damage from reverse polarity.

Diode Element Material: SILICON

Silicon material ensures excellent electrical properties and performance reliability in a wide range of operating conditions.

Technical Specifications

Zener Diodes BZV90C10TRL attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

8 mV/Cel

Working Test Current:

5 mA

Trade Compliance

BZV90C10TRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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