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BZV90-C12135

NXP Semiconductors

BZV90-C12135 by NXP Semiconductors

BZV90-C12135 by NXP Semiconductors is a unidirectional Zener diode with a nominal reference voltage of 12 V and max power dissipation of 1.5 W. It features a low reverse current of 0.1 µA and operates up to 150 °C, ideal for voltage regulation in compact electronics.

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,263 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 482 parts In-Stock

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Native Components

USA . 777 parts In-Stock

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Northwest PG Solutions

USA . 554 parts In-Stock

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UNI Independent Distributors

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Corphita

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Overview

Elevate your designs with the BZV90-C12135 Zener Diode from NXP Semiconductors, a leader in innovation and reliability. This high-quality component ensures stable performance across various applications, from voltage regulation to signal clipping. With its compact design and superior thermal stability, it seamlessly integrates into your projects while providing exceptional value and peace of mind. Choose NXP for unmatched quality and elevate your electronic solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this Zener diode suitable for a variety of applications.

Config: SINGLE

A single configuration simplifies design and integration into circuits, making it easier for engineers to implement into their projects.

Working Test Current: 5 mA

This current level is optimal for a wide range of applications, allowing for effective voltage regulation without excessive power consumption.

Surface Mount: YES

The surface mount capability facilitates easy placement on PCBs, supporting high-density designs and improving overall manufacturing efficiency.

Maximum Reverse Current: 0.1 µA

A low reverse current value indicates minimal leakage, enhancing the performance and reliability of the diode in critical applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it suitable for compact electronic designs.

No. of Terminals: 4

Having four terminals provides increased connectivity options, allowing versatility in circuit design and improved layout flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications where minimizing PCB area is essential.

Maximum Voltage Tolerance: 5 %

A maximum voltage tolerance of 5% ensures reliable performance and precision in voltage regulation within acceptable limits.

Maximum Operating Temperature: 150 °C

This high operating temperature rating makes the diode suitable for demanding applications in extreme environments.

Terminal Finish: TIN

A tin finish ensures good solderability and corrosion resistance, enhancing the longevity and reliability of the solder joints.

Terminal Position: DUAL

Dual terminal positions improve flexibility during installation and can simplify circuit layout and design.

Case Connection: CATHODE

A cathode connection aligns with standard usage in voltage regulation circuits, providing intuitive placement for designers.

Maximum Power Dissipation: 1.5 W

High power dissipation capability ensures that the diode can handle larger loads without overheating, which is vital for reliable long-term operation.

Diode Type: ZENER DIODE

As a Zener diode, it excels in providing voltage regulation and reference, making it essential for stabilizing voltage in electronic circuits.

Maximum Voltage Temperature Coefficient: 10 mV/°C

With a low temperature coefficient, this diode maintains stable operation across temperature variations, ensuring consistent performance.

Nominal Reference Voltage: 12 V

A nominal reference voltage of 12 V is commonly used in many circuits, making this diode an excellent choice for standard applications.

Technology: ZENER

Using advanced Zener technology, this diode offers improved performance and reliability over conventional designs.

Terminal Form: GULL WING

Gull wing terminals enhance soldering stability and provide a strong mechanical connection to the PCB.

Polarity: UNIDIRECTIONAL

Unidirectional configuration simplifies circuit design by defining clear current flow, essential for voltage regulation applications.

Diode Element Material: SILICON

Silicon construction underpins the diode's efficiency and reliability, contributing to its widespread use in electronic components.

Technical Specifications

Zener Diodes BZV90-C12135 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Maximum Reverse Current:

.1 uA

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

10 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV90-C12135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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