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BZV90C11TRL

NXP Semiconductors

BZV90C11TRL by NXP Semiconductors

BZV90C11TRL from NXP Semiconductors is a unidirectional Zener diode with an 11V nominal reference voltage, ideal for voltage regulation. It features a max power dissipation of 1.3W and operates at a working test current of 5mA. This surface-mount device is perfect for compact electronic applications.

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3

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1k+

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Vyrian

USA . 1,567 parts In-Stock

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Digiode

USA . 1,107 parts In-Stock

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Anansix

USA . 777 parts In-Stock

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One Stop Electronics

USA . 996 parts In-Stock

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$1.010

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996

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Native Components

USA . 648 parts In-Stock

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$25.206

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Northwest PG Solutions

USA . 2,019 parts In-Stock

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$27.727

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$24.954

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UNI Independent Distributors

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Corphita

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Overview

Unlock unparalleled performance with the BZV90C11TRL Zener Diode from NXP Semiconductors! Renowned for quality and innovation, NXP delivers reliable solutions ideal for voltage regulation in consumer electronics, automotive systems, and more. This compact diode ensures stability and precision, empowering your designs while streamlining production. Choose BZV90C11TRL for exceptional value and efficiency—commit to excellence today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

Having a single configuration simplifies integration into circuit designs, providing a straightforward solution for voltage regulation.

Working Test Current: 5 mA

A working test current of 5 mA allows for efficient performance in low-power applications while ensuring reliable operation.

Surface Mount: YES

The surface mount capability allows for compact designs and easy soldering on PCBs, improving overall space utilization.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier layout designs on printed circuit boards, making it more convenient for engineers.

No. of Terminals: 4

With 4 terminals, it provides flexibility in circuit design, allowing for various configurations and connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs, making it ideal for compact electronic devices.

Terminal Finish: TIN

A tin terminal finish offers good solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: DUAL

The dual terminal position provides enhanced connectivity options, which can aid in more complex circuit designs.

Case Connection: CATHODE

A cathode connection provides a clear polarity direction, essential for effective circuit integration and function.

Maximum Power Dissipation: 1.3 W

This high power dissipation capability allows the diode to handle considerable power loads without overheating, ensuring reliability.

Diode Type: ZENER DIODE

As a Zener diode, it is specifically designed for voltage regulation, making it a perfect choice for protecting circuits from overvoltage.

Maximum Voltage Temperature Coefficient: 9mv/°C

This low temperature coefficient indicates stable performance over varying temperatures, ensuring consistent voltage regulation.

Nominal Reference Voltage: 11 V

With a nominal reference voltage of 11 V, it is ideal for applications requiring specific voltage references, boosting circuit performance.

Technology: ZENER

Utilizing Zener technology means effective voltage clamping and regulation, essential for safeguarding sensitive electronic components.

Terminal Form: GULL WING

Gull wing terminal form enhances soldering capability, ensuring strong and reliable electrical connections on the PCB.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that current flows in one direction, simplifying circuit design and enhancing safety.

Diode Element Material: SILICON

Silicon is a widely used material that offers excellent electrical properties, making it reliable for various semiconductor applications.

Technical Specifications

Zener Diodes BZV90C11TRL attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

11 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

9 mV/Cel

Working Test Current:

5 mA

Trade Compliance

BZV90C11TRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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