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MMSZ5V1T1G

Onsemi

MMSZ5V1T1G by Onsemi

The Onsemi MMSZ5V1T1G is a Zener diode with 5.1V nominal reference voltage and 60 ohm max dynamic impedance. It is a unidirectional diode made of silicon, suitable for applications requiring precise voltage regulation in small outline packages. With UL recognition, it operates b/w -55 to 150 °C and has a power dissipation of 0.5W.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

41

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1k+

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Mouser Electronics

USA . 30,105 parts In-Stock

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DigiKey

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Arrow

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Newark

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Farnell

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Element14

Singapore . 57,000 parts In-Stock

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Master Electronics

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Chip1Stop

Japan . 477 parts In-Stock

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Digiode

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USA . 8,580 parts In-Stock

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TME

Poland . 22,876 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Maritex

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IBS Electronics

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NAC Semi

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Ack Elektronik San.Tic.Ltd.Sti

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Semicontronic

India . 18,423 parts In-Stock

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Corohmni

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Corphita

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Netroflash

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Perfect Parts

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Component Connect

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Continental Prestige Electronics

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Metaverse IC Inc.

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Brazil . 25,916 parts In-Stock

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Lucentia Tech

USA . 25,916 parts In-Stock

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Allen Electronics Distributors

USA . 11,550 parts In-Stock

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Overview

Discover the reliable MMSZ5V1T1G Zener diode by Onsemi, the perfect choice for your electronic projects. With a focus on quality and performance, Onsemi ensures that each component meets the highest standards in the industry. This small outline package offers easy installation with dual terminals and matte tin finish. Whether you're working on power supplies, voltage regulation, or signal processing, this zener diode provides stable and precise 5.1V reference voltage with a low dynamic impedance of 60 ohm. Trust Onsemi for superior products that deliver consistent results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy packaging provides durability and protection for the zener diode, making it suitable for various operating conditions.

Working Test Current: 5 mA

The 5 mA working test current ensures stable and reliable performance of the zener diode within its specified parameters.

Surface Mount: YES

Being surface mountable makes the zener diode easy to install and suitable for compact electronic designs.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures accurate voltage regulation in circuits where the zener diode is used.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this zener diode can withstand high-temperature environments without compromising performance.

Nominal Reference Voltage: 5.1 V

The 5.1V nominal reference voltage provides precise voltage regulation, making the zener diode ideal for applications requiring stable voltage output.

Technical Specifications

Zener Diodes MMSZ5V1T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

MMSZ5V1T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-615-4265, 5961016154265

NIIN

016154265

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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