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BGY110E

NXP Semiconductors

BGY110E by NXP Semiconductors

BGY110E by NXP Semiconductors is a narrow band medium power RF amplifier with a gain of 32.3 dB, operating b/w 872 MHz and 905 MHz. It handles up to 4.77 dBm input power and features a VSWR of 2. Ideal for RF applications in demanding environments, it operates at up to 90 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 2,100 parts In-Stock

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Digiode

USA . 1,915 parts In-Stock

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Connector Distribution Corp

USA . 1,125 parts In-Stock

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Anansix

USA . 615 parts In-Stock

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Vyrian

USA . 122 parts In-Stock

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Odintec Ltd.

Israel . 82 parts In-Stock

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GES GmbH

Germany . 38 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 758 parts In-Stock

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$5.678

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One Stop Electronics

USA . 880 parts In-Stock

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$6.000

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880

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A-Z Elektronik GmbH

Germany . 6,729 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,486 parts In-Stock

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Corphita

USA . 1,483 parts In-Stock

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Northwest PG Solutions

USA . 735 parts In-Stock

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UNI Independent Distributors

Spain . 415 parts In-Stock

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Kepictronics

USA . 57 parts In-Stock

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Overview

Elevate your RF applications with the BGY110E by NXP Semiconductors, a trusted leader in innovative technology. This narrow-band medium power amplifier delivers exceptional gain and reliability, ensuring top-notch performance in diverse environments. Perfect for communications and broadcasting, it promises superior signal integrity and efficiency, empowering you to achieve seamless connectivity and enhanced operational success. Choose BGY110E for unmatched quality and confidence!

Feature Benefit Bullets

Maximum Input Power (CW): 4.77 dBm

This product can handle relatively high input power levels, making it ideal for applications requiring robust signal amplification.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 indicates good impedance matching, minimizing signal reflections and improving overall efficiency in RF applications.

Construction: COMPONENT

As a component-based construction, this amplifier is versatile and can be easily integrated into various systems or applications.

Maximum Operating Temperature: 90 °C

The high maximum operating temperature ensures reliability and performance in demanding environments, allowing for deployment in various conditions.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

Narrow band medium power amplification is perfect for specific frequency applications, ensuring optimal performance and signal integrity.

Characteristic Impedance: 50 ohm

A standard characteristic impedance of 50 ohms allows for compatibility with most RF systems, facilitating integration and minimizing losses.

Gain: 32.3 dB

With a gain of 32.3 dB, this amplifier significantly boosts weak signals, making it suitable for applications requiring high signal clarity and strength.

Minimum Operating Frequency: 872 MHz

The low operating frequency makes this amplifier suitable for various communication applications in the UHF spectrum and above.

Maximum Operating Frequency: 905 MHz

With a maximum frequency of 905 MHz, this device is tailored for narrow-band applications, ensuring excellent performance within its designated band.

Technical Specifications

RF & Microwave Amplifiers BGY110E attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

32.3 dB

Maximum Input Power (CW):

4.77 dBm

Maximum Operating Frequency:

905 MHz

Minimum Operating Frequency:

872 MHz

Maximum Operating Temperature:

90 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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