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BGY114C

NXP Semiconductors

BGY114C by NXP Semiconductors

BGY114C by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 39 dB. It operates b/w 890 MHz and 915 MHz, handling max input power of 4.77 dBm and temperatures from -30 °C to 100 °C. Ideal for RF applications in communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,400 parts In-Stock

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3,400

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Vyrian

USA . 3,294 parts In-Stock

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3,294

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Anansix

USA . 981 parts In-Stock

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981

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Distributors (Availability)

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One Stop Electronics

USA . 427 parts In-Stock

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$1.000

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427

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UNI Independent Distributors

Spain . 7,912 parts In-Stock

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Corphita

USA . 3,732 parts In-Stock

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Northwest PG Solutions

USA . 2,320 parts In-Stock

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2,320

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Native Components

USA . 749 parts In-Stock

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Overview

Unlock superior performance with the BGY114C from NXP Semiconductors, a leader in innovative RF solutions. This narrow band high power amplifier ensures top-tier quality and reliability, ideal for a range of applications including communications and broadcasting. With its impressive gain and robust construction, you can expect exceptional signal clarity and strength. Elevate your projects with a trusted component that combines efficiency with unmatched durability, bringing your vision to life seamlessly.

Feature Benefit Bullets

Maximum Input Power (CW): 4.77 dBm

This high input power rating allows for robust signal amplification without distortion, making it ideal for demanding RF applications.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 indicates efficient power transfer and reduced signal reflection, ensuring optimal performance in various setups.

Construction: COMPONENT

Being a component-based amplifier, it offers flexibility for integration into custom RF solutions, catering to specific system requirements.

Maximum Operating Temperature: 100 °C

This high temperature tolerance ensures reliability and stable performance even in harsh environmental conditions.

Minimum Operating Temperature: -30 °C

The capability to operate at low temperatures enhances its versatility, making it suitable for a wide range of applications.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Designed as a narrowband high-power amplifier, it delivers excellent performance within a specific frequency range, ideal for targeted applications.

Characteristic Impedance: 50 ohm

The standard 50-ohm impedance ensures compatibility with most RF systems, providing ease of integration and minimizing signal loss.

Gain: 39 dB

With a substantial gain of 39 dB, this amplifier ensures effective signal amplification, enhancing communication and signal integrity.

Minimum Operating Frequency: 890 MHz

This minimum frequency capability makes it suitable for various RF applications, including cellular and communication systems.

Maximum Operating Frequency: 915 MHz

Operational up to 915 MHz, this amplifier effectively caters to high-frequency applications, providing reliable signal boosting in that bandwidth.

Technical Specifications

RF & Microwave Amplifiers BGY114C attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

39 dB

Maximum Input Power (CW):

4.77 dBm

Maximum Operating Frequency:

915 MHz

Minimum Operating Frequency:

890 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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