Loading...

BGY110F

NXP Semiconductors

BGY110F by NXP Semiconductors

BGY110F by NXP Semiconductors is a narrow band medium power RF amplifier with a gain of 32.3 dB and operates b/w 890 MHz to 915 MHz. It handles a max input power of 4.77 dBm and features a VSWR of 2, making it ideal for communication applications. With an operating temp up to 90 °C, it's reliable in various environments.

Median Price

$24.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 74 parts In-Stock

1+ parts

$24.000

100+ parts

$21.230

1k+ parts

-

10k+ parts

-

74

$24.000

$21.230

-

-

Digiode

USA . 3,848 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,848

-

-

-

-

Anansix

USA . 2,562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,562

-

-

-

-

Vyrian

USA . 267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

267

-

-

-

-

GES GmbH

Germany . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,292 parts In-Stock

1+ parts

$9.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,292

$9.000

-

-

-

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

UNI Independent Distributors

Spain . 5,286 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,286

-

-

-

-

Alle Elektronik GmbH

Germany . 4,382 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,382

-

-

-

-

Corphita

USA . 3,911 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,911

-

-

-

-

Northwest PG Solutions

USA . 2,317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,317

-

-

-

-

Native Components

USA . 257 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

257

-

-

-

-

Kepictronics

USA . 95 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

95

-

-

-

-

Perfect Parts

USA . 54 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54

-

-

-

-

Overview

Elevate your wireless communication systems with the BGY110F from NXP Semiconductors—a trusted leader in RF solutions. Designed for narrow band medium power applications, this amplifier delivers exceptional quality and reliability, ensuring seamless connectivity. With its impressive gain and robust construction, the BGY110F is ideal for enhancing signal strength in various devices, making it an invaluable asset for engineers seeking performance and efficiency without compromise. Experience the NXP advantage today!

Feature Benefit Bullets

Maximum Input Power (CW): 4.77 dBm

This specification indicates that the amplifier can handle a significant input power level, making it suitable for applications that require reliable performance without distortion or damage.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 means that the amplifier operates efficiently with minimal reflected power, ensuring optimal signal transmission and reducing the risk of performance degradation.

Construction: COMPONENT

Being a component type amplifier allows for versatile integration into various systems, providing flexibility for developers and engineers in different applications.

Maximum Operating Temperature: 90 °C

The high maximum operating temperature ensures that the amplifier can function reliably in demanding environments, making it a robust choice for industrial and outdoor applications.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

Designed as a narrow band medium power amplifier, it excels in targeted frequency applications, providing enhanced performance in communication systems that require precision.

Characteristic Impedance: 50 ohm

With a standard characteristic impedance of 50 ohms, this amplifier is compatible with most RF equipment, facilitating easy integration and minimizing signal loss.

Gain: 32.3 dB

A gain of 32.3 dB enhances signal strength significantly, making this amplifier ideal for applications that need to boost weak signals for improved transmission quality.

Minimum Operating Frequency: 890 MHz

The minimum frequency of 890 MHz allows the amplifier to be used in a variety of modern communication systems, including those operating within cellular and Wi-Fi bands.

Maximum Operating Frequency: 915 MHz

Operating up to 915 MHz, this amplifier is well-suited for applications such as industrial, scientific, and medical (ISM) bands, ensuring compatibility with various technologies.

Technical Specifications

RF & Microwave Amplifiers BGY110F attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

32.3 dB

Maximum Input Power (CW):

4.77 dBm

Maximum Operating Frequency:

915 MHz

Minimum Operating Frequency:

890 MHz

Maximum Operating Temperature:

90 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19