Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BGY110F by NXP Semiconductors is a narrow band medium power RF amplifier with a gain of 32.3 dB and operates b/w 890 MHz to 915 MHz. It handles a max input power of 4.77 dBm and features a VSWR of 2, making it ideal for communication applications. With an operating temp up to 90 °C, it's reliable in various environments.
Median Price
$24.000
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
Bristol Electronics
1+ parts
100+ parts
$21.230
1k+ parts
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10k+ parts
Digiode
Anansix
Vyrian
GES GmbH
One Stop Electronics
$9.000
Authorized Procurement Solutions
UNI Independent Distributors
Alle Elektronik GmbH
Corphita
Northwest PG Solutions
Native Components
Kepictronics
Perfect Parts
This specification indicates that the amplifier can handle a significant input power level, making it suitable for applications that require reliable performance without distortion or damage.
A VSWR of 2 means that the amplifier operates efficiently with minimal reflected power, ensuring optimal signal transmission and reducing the risk of performance degradation.
Being a component type amplifier allows for versatile integration into various systems, providing flexibility for developers and engineers in different applications.
The high maximum operating temperature ensures that the amplifier can function reliably in demanding environments, making it a robust choice for industrial and outdoor applications.
Designed as a narrow band medium power amplifier, it excels in targeted frequency applications, providing enhanced performance in communication systems that require precision.
With a standard characteristic impedance of 50 ohms, this amplifier is compatible with most RF equipment, facilitating easy integration and minimizing signal loss.
A gain of 32.3 dB enhances signal strength significantly, making this amplifier ideal for applications that need to boost weak signals for improved transmission quality.
The minimum frequency of 890 MHz allows the amplifier to be used in a variety of modern communication systems, including those operating within cellular and Wi-Fi bands.
Operating up to 915 MHz, this amplifier is well-suited for applications such as industrial, scientific, and medical (ISM) bands, ensuring compatibility with various technologies.
RF & Microwave Amplifiers BGY110F attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors
Characteristic Impedance:
Construction:
Gain:
Maximum Input Power (CW):
Maximum Operating Frequency:
Minimum Operating Frequency:
Maximum Operating Temperature:
RF or Microwave Device Type:
Maximum Voltage Standing Wave Ratio:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
Silicon Standard
LM358DT
STMicroelectronics
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
2N7002
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
1N4148
Baneasa S A
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS360T3G
Onsemi
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
EU2B-YS3303C
Idec
ROTARY SWITCH;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Taitron Components
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
1N4148WS
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
1554216004
Molex
WIRE AND CABLE;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ERA-3SM+
Mini-circuits
Mini-circuits ERA-3SM+ is a wideband low power RF amplifier with 15.4 dB gain and 50 ohm impedance. It operates from 0 to 3000 MHz, handling up to 13 dBm CW input power. Ideal for surface mount applications in RF and microwave systems, it has a compact plastic/epoxy package and requires only a 3V supply.
XP1044-QL-0N00
Mimix Broadband
NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
SST13LP05-MLCF
Microchip Technology
SST13LP05-MLCF by Microchip Technology is a wide band medium power RF amplifier with 28 dB gain. It operates b/w 2400-2500 MHz, ideal for wireless communication applications. The component has 16 terminals, matte tin finish, and can handle temperatures from -40 to 85°C.
SBB-2089Z
Sirenza Microdevices
Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.
TGA2578-CP
Qorvo
TGA2578-CP by Qorvo is a GAN technology RF amplifier with 26 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. This module features -2.8V/28V power supplies, surface mounting, and requires 400mA supply current.
RF5110GTR7
Rf Micro Devices
WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; JESD-609 Code: e3; Maximum Supply Current: 2400 mA;
BGA231N7E6330XTSA1
Infineon Technologies
Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
PHA-102+
WIDE BAND LOW POWER;
MSA-0686-BLK
Hewlett Packard
WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;
MGA-72543-TR1G
Broadcom
Broadcom's MGA-72543-TR1G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.
MMG3002NT1
NXP Semiconductors
NXP Semiconductors' MMG3002NT1 is a wide band low power RF amplifier with 19.3 dB gain, handling up to 12 dBm CW input power. Operating from 40 MHz to 3600 MHz, it's ideal for RF and microwave applications requiring high performance in a compact form factor.
ADL9005ACPZN-R7
ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.
XP1039-QJ-0G0T
M/a-com Technology Solutions
XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
ADL5544ARKZ-R7
ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.
MW7IC2220NR1
The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.
HELA-10
HELA-10 by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface-mount package.
MAX2232EEE+
NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; Maximum Operating Temperature: 85 Cel;
SGA-3563Z
SGA-3563Z by Sirenza Microdevices is a wide band low power RF amplifier with 19.5 dB gain and 50 ohm impedance. It operates from 0 to 5000 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in RF & microwave systems.
HMC902LP3E
HMC902LP3E by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it suitable for various RF and microwave applications requiring high performance in a compact package.
ERA-2SM+
The Mini-circuits ERA-2SM+ is a wide band low power RF amplifier with 11.9 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 15 dBm input power, and has a VSWR of 1.6. Ideal for RF & microwave applications requiring compact surface mount components.
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BGY114B
NARROW BAND HIGH POWER; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 905 MHz; Maximum Operating Temperature: 100 Cel; Gain: 37.8 dB; Construction: COMPONENT;
BGY112C
NARROW BAND HIGH POWER; Minimum Operating Frequency: 146 MHz; Construction: MODULE; Maximum Operating Temperature: 90 Cel; Maximum Input Power (CW): 3 dBm; Maximum Operating Frequency: 174 MHz;
BGY110D
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 849 MHz; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 824 MHz; Maximum Input Power (CW): 4.77 dBm; Gain: 32.3 dB;
BGY113G
NARROW BAND HIGH POWER; Minimum Operating Temperature: -30 Cel; Maximum Input Power (CW): 7 dBm; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 470 MHz; Maximum Operating Frequency: 520 MHz;
BGY113B
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Gain: 38.5 dB; Maximum Operating Frequency: 470 MHz; Maximum Input Power (CW): 7 dBm;
BGY112A
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 88 MHz; Maximum Input Power (CW): 3 dBm; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2;
BGY114C
NARROW BAND HIGH POWER; Minimum Operating Frequency: 890 MHz; Maximum Operating Temperature: 100 Cel; Maximum Operating Frequency: 915 MHz; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm;
BGY1085A,112
WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 240 mA; Maximum Operating Temperature: 100 Cel;
BGY113A
NARROW BAND HIGH POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Input Power (CW): 7 dBm;
BGY110E
NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Gain: 32.3 dB; Maximum Operating Frequency: 905 MHz;
BGY113F
NARROW BAND HIGH POWER; Maximum Operating Frequency: 470 MHz; Minimum Operating Frequency: 430 MHz; Gain: 35.5 dB; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm;
BGY113C
NARROW BAND HIGH POWER; Maximum Operating Frequency: 520 MHz; Maximum Operating Temperature: 90 Cel; Characteristic Impedance: 50 ohm; Gain: 38.5 dB; Maximum Input Power (CW): 7 dBm;
BGY110G
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 928 MHz; Construction: COMPONENT; Maximum Input Power (CW): 4.77 dBm; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 902 MHz;
BGY114A
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;
BGY110B
NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 50; Maximum Input Power (CW): 3 dBm; Maximum Operating Frequency: 905 MHz; Maximum Operating Temperature: 90 Cel;
BGY112B
NARROW BAND HIGH POWER; Maximum Operating Frequency: 156 MHz; Maximum Input Power (CW): 3 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 90 Cel; Minimum Operating Frequency: 132 MHz;
BGY1085A
WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Power Supplies (V): 24; Package Equivalence Code: SOT-115J;
BGY110A
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 849 MHz; Maximum Operating Temperature: 90 Cel; Maximum Input Power (CW): 3 dBm; Construction: MODULE; Minimum Operating Frequency: 824 MHz;
BGY113E
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Frequency: 400 MHz; Maximum Input Power (CW): 7 dBm; Maximum Operating Temperature: 90 Cel;
Supply Digital Components
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