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BGY114A

NXP Semiconductors

BGY114A by NXP Semiconductors

BGY114A by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 37.8 dB and operates b/w 824 MHz to 849 MHz. It supports max input power of 4.77 dBm and withstands temperatures from -30 °C to 100 °C. Ideal for RF applications in telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,428 parts In-Stock

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Vyrian

USA . 1,381 parts In-Stock

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Anansix

USA . 802 parts In-Stock

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802

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R&J Components

USA . 12 parts In-Stock

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One Stop Electronics

USA . 779 parts In-Stock

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$39.000

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779

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UNI Independent Distributors

Spain . 4,039 parts In-Stock

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Corphita

USA . 3,311 parts In-Stock

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Northwest PG Solutions

USA . 1,129 parts In-Stock

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Native Components

USA . 604 parts In-Stock

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Overview

Elevate your RF applications with the BGY114A by NXP Semiconductors—a leader in innovative technology. Designed for high-performance narrowband amplification, this robust amplifier ensures exceptional signal quality and reliability across a wide temperature range. Whether you're optimizing communication systems or enhancing broadcasting capabilities, the BGY114A delivers unmatched value, empowering your projects with superior gain and efficiency that drive success. Trust NXP to elevate your engineering solutions to new heights!

Feature Benefit Bullets

Maximum Input Power (CW): 4.77 dBm

The maximum input power rating of 4.77 dBm allows this amplifier to handle robust signals, making it suitable for applications that require strong signal integrity.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 indicates good matching between the amplifier and the load, which minimizes signal reflection and maximizes efficiency, ensuring reliable performance.

Construction: COMPONENT

As a component-based product, this amplifier is versatile and can be easily integrated into various RF applications, providing flexibility in design.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100 °C, this amplifier is capable of performing in demanding environments, making it reliable for prolonged use.

Minimum Operating Temperature: -30 °C

The ability to operate at temperatures as low as -30 °C ensures functionality in extreme cold conditions, broadening its applicability in diverse environments.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow band high power device, this amplifier excels in applications requiring focused frequency operation, enhancing performance in specific RF communication tasks.

Characteristic Impedance: 50 ohm

The standard characteristic impedance of 50 ohms makes this amplifier compatible with a wide range of RF devices, facilitating easy integration into existing systems.

Gain: 37.8 dB

A gain of 37.8 dB provides significant amplification, making this amplifier ideal for systems needing substantial signal enhancement.

Minimum Operating Frequency: 824 MHz

Starting from a minimum operating frequency of 824 MHz, this amplifier is tailored for applications in the lower portion of the microwave spectrum, suitable for various communication systems.

Maximum Operating Frequency: 849 MHz

The maximum operating frequency of 849 MHz allows this amplifier to support narrow-bandwidth applications efficiently, ensuring effective performance in targeted frequency ranges.

Technical Specifications

RF & Microwave Amplifiers BGY114A attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

37.8 dB

Maximum Input Power (CW):

4.77 dBm

Maximum Operating Frequency:

849 MHz

Minimum Operating Frequency:

824 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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