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BGY113B

NXP Semiconductors

BGY113B by NXP Semiconductors

BGY113B by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 38.5 dB, operating b/w 430 MHz and 470 MHz. It handles up to 7 dBm input power and operates in temperatures from -30 °C to 90 °C. Ideal for RF applications requiring robust performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,798 parts In-Stock

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3,798

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Anansix

USA . 1,117 parts In-Stock

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1,117

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Vyrian

USA . 154 parts In-Stock

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154

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GES GmbH

Germany . 9 parts In-Stock

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9

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Distributors (Availability)

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Native Components

USA . 586 parts In-Stock

1+ parts

$1.176

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586

$1.176

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Northwest PG Solutions

USA . 997 parts In-Stock

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$1.294

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997

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One Stop Electronics

USA . 1,460 parts In-Stock

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$39.000

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$39.000

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UNI Independent Distributors

Spain . 6,137 parts In-Stock

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Corphita

USA . 1,067 parts In-Stock

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Overview

Unlock the potential of your RF applications with the BGY113B from NXP Semiconductors, a leader in high-quality semiconductor solutions. This narrow-band high-power amplifier delivers exceptional performance, ensuring reliable operation across extreme temperatures. Experience superior gain and efficiency, making it ideal for communications, broadcasting, and industrial uses. Trust in NXP's expertise to elevate your projects, enhancing signal clarity and operational excellence.

Feature Benefit Bullets

Maximum Input Power (CW): 7 dBm

This product can handle relatively high input power levels, making it suitable for applications that require robust performance and reliability in signal amplification.

Maximum Voltage Standing Wave Ratio: 2

A low VSWR of 2 indicates efficient power transfer and reduced signal reflection, ensuring better system performance and longevity.

Construction: COMPONENT

Designed as a component, this amplifier can easily integrate into various RF systems, providing flexibility in system design.

Maximum Operating Temperature: 90 °C

With a maximum operating temperature of 90 °C, this amplifier is capable of functioning in high-temperature environments, ideal for demanding applications.

Minimum Operating Temperature: -30 °C

The ability to operate at -30 °C ensures reliable performance in harsh, cold environments, making it versatile for outdoor or extreme applications.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow band high power amplifier, it excels in enhancing signals within specific frequency ranges, which is crucial for applications demanding high accuracy.

Characteristic Impedance: 50 ohm

A characteristic impedance of 50 ohms is a standard in RF applications, ensuring compatibility with a wide range of RF cables and equipment.

Gain: 38.5 dB

A high gain of 38.5 dB significantly boosts weak signals, making this amplifier ideal for applications that require extensive signal amplification.

Minimum Operating Frequency: 430 MHz

It supports a minimum operating frequency of 430 MHz, making it suitable for various communication and broadcasting applications in this frequency range.

Maximum Operating Frequency: 470 MHz

With a maximum operating frequency of 470 MHz, this amplifier is tailored for narrow band applications, ensuring precise signal processing within the specified spectrum.

Technical Specifications

RF & Microwave Amplifiers BGY113B attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

38.5 dB

Maximum Input Power (CW):

7 dBm

Maximum Operating Frequency:

470 MHz

Minimum Operating Frequency:

430 MHz

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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