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BGY113A

NXP Semiconductors

BGY113A by NXP Semiconductors

BGY113A by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 38.5 dB, operating b/w 400 MHz and 440 MHz. It handles max input power of 7 dBm and operates in temperatures from -30 °C to 90 °C. Ideal for RF applications requiring robust performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 4,792 parts In-Stock

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Anansix

USA . 1,315 parts In-Stock

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Digiode

USA . 976 parts In-Stock

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976

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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Cogito LLC

Ukraine . 41 parts In-Stock

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GES GmbH

Germany . 3 parts In-Stock

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One Stop Electronics

USA . 1,403 parts In-Stock

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$7.000

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UNI Independent Distributors

Spain . 7,193 parts In-Stock

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Corphita

USA . 4,244 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Northwest PG Solutions

USA . 915 parts In-Stock

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915

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Native Components

USA . 512 parts In-Stock

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Overview

Unlock superior performance with the BGY113A from NXP Semiconductors, a leading name in RF & Microwave technology. This high-power narrowband amplifier ensures exceptional signal quality and reliability, designed to thrive in diverse environments—from industrial applications to communication systems. Experience enhanced gain and efficiency, empowering your projects with robust connectivity and longevity that only NXP can deliver. Elevate your designs today!

Feature Benefit Bullets

Maximum Input Power (CW): 7 dBm

This specification ensures the amplifier can handle input signals up to 7 dBm, making it suitable for applications that require moderate power levels without risking damage.

Maximum Voltage Standing Wave Ratio: 2

With a VSWR of 2, this amplifier minimizes signal reflections, leading to better overall efficiency and performance in RF applications.

Construction: COMPONENT

Designed as a component, this amplifier is suitable for integration into various systems, making it versatile for different engineering applications.

Maximum Operating Temperature: 90 °C

The high maximum operating temperature allows this amplifier to function in harsh environments, ensuring reliability and durability in extreme conditions.

Minimum Operating Temperature: -30 °C

The ability to operate at temperatures as low as -30 °C ensures that this product can be utilized in cold environments without any performance degradation.

RF or Microwave Device Type: NARROW BAND HIGH POWER

As a narrow band high power amplifier, it is optimized for specific frequency ranges, providing efficient performance in targeted applications.

Characteristic Impedance: 50 ohm

The standard 50 ohm impedance ensures compatibility with a wide range of RF systems, allowing for easier integration and optimal power transfer.

Gain: 38.5 dB

The high gain of 38.5 dB enhances signal strength, making this amplifier ideal for applications where signal amplification is critical.

Minimum Operating Frequency: 400 MHz

Starting at a minimum frequency of 400 MHz, this amplifier is well-suited for a variety of communication applications that require operation in the high-frequency range.

Maximum Operating Frequency: 440 MHz

With a maximum operating frequency of 440 MHz, it provides precise amplification for narrowband applications, ensuring optimal performance in its intended frequency range.

Technical Specifications

RF & Microwave Amplifiers BGY113A attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

38.5 dB

Maximum Input Power (CW):

7 dBm

Maximum Operating Frequency:

440 MHz

Minimum Operating Frequency:

400 MHz

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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